FQP13N50

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The FQP13N50 is a high voltage, high current ultra-fast Field-Effect Transistor (FET) featuring low ON-resistance of 13mΩ typ., a breakdown voltage of 500V and it comes in a TO-220(F) 4pin package. It is designed to deliver high performance normally associated with IGBTs and other high-end MOSFETs. This FET is ideal for use in power management applications including Class D Audio Amplifiers, SMPS and Power Factor Correction(PFC).

The FQP13N50 belongs to a class of FETs known as ‘Enhancement-type’ or ‘Depletion-type’ FETs. It works on the principle of reverse-biasing the gate-to-source junction. When supply voltage is applied between the drain and source, the electric field created between them pushes the electrons away from the source depletion region and towards the drain. This results in the current flow between drain and source resulting in an ON state of the FET.

The FQP13N50 is designed to operate with a VGS( Gate to Source Voltage) between 8V and 28V. Anything above 28V will cause damage to the FET as the current flowing between drain and source is switched off due to VGS exceeding the device threshold voltage. This prevents any build-up of heat within the FET and reduces power consumption. An additional feature of having VGS limited to a certain level is that it helps to protect the FET during fault conditions.

The FQP13N50 incorporates a special low-resistance drain region which enables fast and efficient switching. This reduced resistance also minimizes losses by reducing the power gone to waste due to voltage and current drops. The FQP13N50 is also designed to cope with high operating temperatures and high pulse currents, making it suitable for high-current applications.

The FQP13N50 has a host of features making it ideal for high power applications. Its low gate-to-drain capacitance ensures minimal switching delay and its strong structure ensures high reliability. It has a low gate charge, which is a measure of gate current or charge storage which reduces switching losses and makes the FET suitable for high frequency and high efficiency applications. Finally, its optimized design enables it to handle high temperatures better than many other devices in the same class.

In addition to these features, the FQP13N50 also has fast propagation delays and superior transistor switching capacity making it suitable for applications like low-voltage DC/DC converters, switch-mode power supplies, motor drives, and other high-power, high-frequency switching applications. The FQP13N50 is also a popular choice for audio applications such as Class-D Amplifiers, due to its a low output noise and low THD.

Overall, the FQP13N50 is an excellent choice for high power applications. It delivers excellent performance, efficiency, and reliability and its numerous features make it suitable for a wide variety of applications.

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