FQP19N20C

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FQP19N20C is a type of fieldeffect transistor(FET) specifically a metaloxide semiconductor Field-effect transistor (MOSFET). It is a single type of transistor which means that it has only one drain, one gate and one source. As such, it can be used to switch high voltages or high levels of current in a wide range of applications.

FQP19N20C is a power MOSFET, meaning that it is especially useful in the application of heavy machinery construction, the measurement of large amounts of electric current, and various motor control circuits. It is generally applied in the industrial field and automotive industry.

The MOSFET is a semiconductor device that uses the behavior of electric charge carriers (electrons or holes) to control other electronic devices. In the MOSFET structure, the gate and source connect the semiconductor device to an electric field, which controls the flow of current by modulating the electric field strength.

The operating principle of the FQP19N20C is as follows: when a voltage is applied to the source, electrons flow from the source to the drain and carry current to the load attached to the drain connection. At the same time, the gate connection is used to be modulate the electric field strength which applies a voltage to the gates, thereby controlling the current through the device.

The FQP19N20C is capable of providing high levels of current and is designed for power switching applications. Its performance has been tested to be superior to other FETs and MOSFETs in various operating conditions such as high temperature, low temperature, high frequency, and high dv/dt. Its breakdown voltage is above 20V, while its drain current is >19A.

The FQP19N20C is especially suitable for use in applications where fast switching is required, such as switching converters and inverters. It is also highly effective in highpower applications, such as power supplies, telecom power conversion and motor control applications. Its ultra-low gate charge makes it perfect for fast switching circuits and its self-protection feature avoids latch-up at the gate.

The FQP19N20C is a highly reliable, low-cost and energyefficient MOSFET that performs exceptionally well in a wide range of applications. Its superior switching performance, low on-state resistance, high drain current and low gate charge make it an ideal choice for power of motor control applications.

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