FQP17P06

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The FQP17P06 field-effect transistor, also known as the metal-oxide-semiconductor field-effect transistor (MOSFET), is widely used in various types of electrical and electronic circuits, from simple transistor logic applications to complex digital and power applications. This article will discuss the FQP17P06 application field and working principle.

FQP17P06 Overview

The FQP17P06 Transistor is a low-on-resistance (RON) N-Channel MOSFET manufactured by Fairchild Semiconductor. It is housed in an industry standard PowerPAK SO-8 package and is designed for power switching applications such as: DC-DC converters, high-side switches, motor control, automotive applications, etc. This device is also suitable for power supply and load driver applications.

The FQP17P06 is a MOSFET with a maximum drain-source voltage of 200V, a drain current of 7.0A, a gate-source voltage of 15V, a maximum power dissipation of 2.45W, and an on-resistance (Ron) of 0.033 ohms. The device is a single N-Channel Enhancement Mode Field Effect Transistor (FET) with an operating temperature range from -55°C to +150°C.

FQP17P06 Applications

The FQP17P06 is used in a variety of applications where low on-resistance and high current capability are required such as:

• DC-DC converters
• High-side switches
• Motor control
• Power supply and load driver applications
• Automotive applications
• Power transistor circuits

FQP17P06 Working Principle

The FQP17P06 Transistor works on the principle of field-effect transistor or MOSFET. It is a type of transistor in which the electrical characteristics, such as current, voltage and load capability, are controlled by a voltage or current applied to the gate. In other words, the FQP17P06 is an electrically controlled switch, which can be used to control the current flow between the source and drain. It works on the principle of electrostatic attraction/repulsion between charges.

The FQP17P06 can be regarded as an insulated-gate FET (IGFET) having the source and drain connected. The gate is isolated from the channel and the source and drain by an oxide layer located between the gate and the channel. When a suitable voltage is applied to the gate, an electric field is created between the gate and the oxide layer, which in turn induces a charge in the channel. This charge causes the resistance of the channel to increase or decrease, as the case may be. This is known as the "gate effect", wherein the resistance of the channel is determined by applying a voltage to the gate.

For MOSFETs with an electrode configuration, the N-channel FQP17P06 is composed of source, drain, and gate electrodes. In order to switch the FQP17P06 on, the gate is placed at a positive voltage with respect to the source, which creates an electric field that attracts "holes" from the source to the gate. This, in turn, lowers the channel resistance and increases the current between the source and the drain. To switch off, the gate is pulled down to a negative voltage with respect to the source, forming a depletion region between the channel and the gate, which eliminates current.

The FQP17P06 is also able to withstand a wide range of temperatures and is available in various packages to meet various application requirements. It is a cost-effective and reliable solution for various electronics applications. Its features include low gate charge, low gate capacitance, fast switching, low RDSon, high blocking voltage and low leakage current.

Conclusion

The FQP17P06 Field-Effect Transistor is a reliable and cost-effective solution for various applications that require low on-resistance and high current capability. It is a MOSFET with a maximum drain-source voltage of 200V and a gate-source voltage of 15V. It operates on the principle of electrostatic attraction/repulsion between charges and can be used to switch on and off current flow between the source and the drain. The FQP17P06 can withstand a wide range of temperatures and is available in various packages to meet application requirements.

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