Allicdata Part #: | FQP10N20C-ND |
Manufacturer Part#: |
FQP10N20C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 9.5A TO-220 |
More Detail: | N-Channel 200V 9.5A (Tc) 72W (Tc) Through Hole TO-... |
DataSheet: | FQP10N20C Datasheet/PDF |
Quantity: | 1027 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 72W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 4.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Field effect transistors (FETs) are a type of transistor that relies on electric fields to control the current flow between source and drain terminals. FETs have been around since the early 1950s and have been widely used in many applications. The FQP10N20C is a commonly used FET in today\'s market. This article will discuss the application field, the principles of operation, and the package layout of the FQP10N20C.
Application Field of the FQP10N20C
The FQP10N20C is typically used in audio amplifiers, motor control, and switching applications. The FQP10N20C features a low on-resistance and low gate threshold voltage which makes it suitable for high-speed switching. The low gate threshold voltage also means that the FET can be easily activated using a small signal, making it ideal for use in analog applications. The FQP10N20C can also handle large currents up to 20A. This makes the FQP10N20C a versatile device for many applications.
Working Principle of the FQP10N20C
The working principle of the FQP10N20C is based on the physics of electric fields. A field effect transistor consists of three terminals: the source, drain, and gate. When an electric field is applied to the gate, it alters the conductivity between the source and drain terminals. The electric field is generated by a small signal applied to the gate. The source and drain terminals are connected to the load, which is then controlled by the signal applied to the gate. The current flow between the source and drain can be adjusted by changing the voltage to the gate.
The FQP10N20C is a N-channel MOSFET, which means that when the gate is at a negative voltage (relative to the source), it will allow current to flow through the device. This is known as an enhancement mode operation. When the gate voltage is brought back to zero or a positive voltage (relative to the source), the current flow is cut off. This is known as the depletion mode operation.
Package Layout of the FQP10N20C
The FQP10N20C is a TO-220 package type which means that it comes in a small plastic package with three pins (source, drain, and gate). It is a low-profile package which makes it easy to use in applications where space is a concern. The package also provides electrical insulation so that no internal components are damaged due to accidental short circuits.
In conclusion, the FQP10N20C is a commonly used MOSFET in today’s market which is used for many applications. The FQP10N20C has a low on-resistance and low gate threshold voltage which makes it an ideal component for high-speed switching applications and audio amplifiers. The package layout of the FQP10N20C makes it easy to use in applications where space is a concern.
The specific data is subject to PDF, and the above content is for reference
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