Allicdata Part #: | FQP10N20CTSTU-ND |
Manufacturer Part#: |
FQP10N20CTSTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 9.5A TO-220 |
More Detail: | N-Channel 200V 9.5A (Tc) 72W (Tc) Through Hole TO-... |
DataSheet: | FQP10N20CTSTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 72W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 4.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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In the world of electronics, MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a commonly used transistor type that is both versatile and reliable. With the property of high input impedance and low output impedance, this type of transistor has become an essential component in various applications such as power supply, small signal amplification and switching devices. One of the particular types of MOSFET transistor is the FQP10N20CTSTU, which has been used in a variety of applications due to its good electrical properties. In this article, we’ll examine the application field and working principle of the FQP10N20CTSTU.
The FQP10N20CTSTU is a 200V N-channel enhancement-mode power MOSFET. This type of MOSFET offers a drain current of 10.2A at 25°C and a maximum drain-source voltage of 200V with a low drain-source on-state resistance of 0.165Ω. All these features of the FQP10N20CTSTU makes it an ideal option for various power applications, including motor control, power management and high speed power switching. It is also perfect for low power devices since it offers low switching times, which leads to lower power consumption. Other applications that use this device include inverter audio applications, battery chargers and industrial controls. It can be noted that the high-thermal-conductivity DPAK package of the device helps to keep the junction temperatures low.
In terms of its working principle, the FQP10N20CTSTU is mainly used to provide current flow between the source and the drain when it is electrically switched on using a gate signal. This gate signal is basically a voltage or a current that is applied to the gate terminal of the device, which controls the flow of electrons from the source to the drain. When a positive voltage is applied to the gate terminal and the drain-source voltage is greater than the threshold voltage of the MOSFET, the current start flowing between the source and the drain. This allows the FQP10N20CTSTU to be used as an amplifier or a switch.
In conclusion, it can be seen that the FQP10N20CTSTU is a highly versatile and reliable type of MOSFET transistor which can be used in a variety of applications. Its high input impedance and low output impedance, low switch times and good drain-source voltage allows for it to be used for power applications, as well as for inverter audio, battery chargers and industrial controls applications. Its working principle is that of providing current flow between the source and the drain when a positive voltage is applied to the gate terminal, thus enabling it to be used as an amplifier or a switch.
The specific data is subject to PDF, and the above content is for reference
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