Allicdata Part #: | FQP1N50-ND |
Manufacturer Part#: |
FQP1N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 1.4A TO-220 |
More Detail: | N-Channel 500V 1.4A (Tc) 40W (Tc) Through Hole TO-... |
DataSheet: | FQP1N50 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 9 Ohm @ 700mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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.FQP1N50 is a type of Single MOSFET, which stands for a particular kind of transistor structure. This type of MOSFET can be used in many different applications, ranging from analog or digital switching to linear amplification and beyond. The FQP1N50 is an option of MOSFET that is especially suitable for high-power applications. It is composed of a silicon chip with N-channel field-effect transistors, along with a few support resistors and capacitors.
The basic theory behind MOSFET operation is based on the electron field effect. Simply put, when a given voltage is applied to the transistor gate, a very small electric charge is generated, known as a “gate voltage.” This voltage alters the form of the transistor’s conductive channel, providing a way for current to flow. The overall effect is much like that of a traditional electrical switch, as the current can be started or stopped with a given amount of voltage.
When it comes to the FQP1N50, the MOSFET’s size and power rating are both a major consideration. The transistor is designed with a total power rating that averages between 150 and 600 watts, depending on the specific chip. Its typical on-state drain current ranges between 5.2 and 0. 2 amperes. This wide power range and high current capability makes the FQP1N50 ideal as a “switching” transistor, as it can handle some major current flows.
This MOSFET is also built with an operating temperature range of -55 to 175 degrees Celsius, which is highly desirable for many industrial applications. The maximum Gate-to-Source voltage is rated at 12 volts, with a gate-threshold voltage at 4.5 volts. The device also features excellent thermal stability, with a total Gate-Threshold voltage drift of -7V/degree Celsius.
Due to its length and weight, the FQP1N50 is an extremely efficient power switch. It is a very simple solution for a variety of high-power switching applications in both analog and digital circuits. Its effectiveness is enhanced by the particularly low on-resistance, allowing for extremely fast switching speeds. It is even suitable for high-frequency uses such as light dimming and audio amplifiers.
The FQP1N50 is a popular choice of MOSFET for a variety of applications. The device’s size and power rating enable it to be used in a wide range of situations. Its high current capability and low threshold voltage add to its appeal, while its high frequency response and low on-resistance make it a optimal choice for switching needs. It\'s the ideal choice for any application that requires a reliable transistor for high-power switching.
The specific data is subject to PDF, and the above content is for reference
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