GP2M005A060CG Discrete Semiconductor Products

Introduction

GP2M005A060CG, a 600V N-channel enhancement mode power MOSFET, is fabricated in advanced dedicated PowerMOS technology. It has an internal gate-to-source Zener diode, drain-to-source avalanche diode and an integrated ESD-protection circuit. This product is designed for medium frequency power switching circuits such as those used in power supplies and lighting applications, and can be used as an alternative to a silicon BJT in high-power applications. In this article, we will discuss the application field and working principle of the GP2M005A060CG.

Application Field of GP2M005A060CG

GP2M005A060CG can be widely used in many applications. It is suitable for medium frequency power switching circuits such as those used in power supplies and lighting applications. In those medium frequency holding current applications, it can provide a robust and cost-effective solution. GP2M005A060CG can also be used in other applications such as uninterruptible power supplies, industrial lighting, general purpose AC/DC converters, automotive, HVAC, lighting and home appliances.

With the 600V breakdown voltage, GP2M005A060CG can be used in high-power applications, such as motor controls and off-line power supplies. In motor control applications, its low gate charge reduces both switching and overall system power losses. Its on-state resistance also provides high system efficiency, thus reducing acoustic noise and increasing the overall stability of the circuit.

Working Principle of GP2M005A060CG

GP2M005A060CG is an enhancement-type MOSFET, meaning that no current is required to be flown in and out of the gate terminal to turn the device on. This is achieved by applying negative voltage on the gate. This negative voltage attracts electrons towards the gate and forms an inversion layer in the channel. The inversion layer carries the electric current from source to drain. This way, current is allowed to flow through the channel.

The internal gate-to-source Zener diode helps to suppress the drain-to-source avalanche current. This helps to prevent device failure in applications that demand high voltage rating. The drain-to-source avalanche diode suppresses the voltage spikes caused by a short circuit between drain and source.

The integrated ESD-protection circuit protects the MOSFET device from ESD damage. The ESD-protection circuit is composed of a charge pump, a peak detector and a Zener clamping circuit. The ESD-protection circuit quickly charges up to the breakdown voltage level, thereby allowing the charge to be quickly dissipated into the human body without disturbing the main circuit.

Conclusion

To conclude, GP2M005A060CG is a 600V N-channel enhancement mode power MOSFET. Its application field includes medium frequency power switching circuits, motor controls, off-line power supplies, uninterruptible power supplies, industrial lighting, general purpose AC/DC converters, automotive, HVAC, lighting, and home appliances. The working principle of GP2M005A060CG is based on the internal gate-to-source Zener diode, drain-to-source avalanche diode and an integrated ESD-protection circuit that allows the device to be turned on or off.