
Allicdata Part #: | IPB65R150CFDAATMA1-ND |
Manufacturer Part#: |
IPB65R150CFDAATMA1 |
Price: | $ 1.93 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH TO263-3 |
More Detail: | N-Channel 650V 22.4A (Tc) 195.3W (Tc) Surface Moun... |
DataSheet: | ![]() |
Quantity: | 1000 |
1000 +: | $ 1.73192 |
Vgs(th) (Max) @ Id: | 4.5V @ 900µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 195.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2340pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
Series: | Automotive, AEC-Q101, CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 9.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 22.4A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IPB65R150CFDAATMA1 is an N-channel MOSFET transistor designed for high-voltage applications. The device is designed to provide extremely low on-resistance and excellent switching ability, making it ideal for load switching, level shifting and clock generation. The IPB65R150CFDAATMA1 is part of the IPB65R series of devices and is available in SOT-223 and SOT-7 packages.
The IPB65R150CFDAATMA1 is a type of MOSFET, or “metal-oxide semiconductor field-effect transistor”. It operates by modulating an electric field formed on a gate, which important in the design of power electronics and an increasing number of other applications. As the gate voltage is changed, the electric field formed between the source and the drain is also changed, modulating the conductivity of the device.
The features of the IPB65R150CFDAATMA1 include a maximum drain-source voltage of 650 V and a maximum drain current of 150 A, with a maximum on-state resistance of just 0.001 Ohm. The device also has an excellent switching speed of just 9 ns and an operating temperature range of -55°C to 175°C. It is also fully RoHS compliant, making it a popular choice for many applications.
The IPB65R150CFDAATMA1 is most commonly used in applications that require high voltages and high current. These include computers, industrial and medical equipment, as well as various automotive applications. The device can also be used in level shifting circuits, which are useful for driving analog and digital signals between two different voltage levels. The device’s high switching speed allows it to achieve faster switching and improved noise immunity.
The IPB65R150CFDAATMA1 is also commonly used in power switching applications. It is commonly used in motor control, power supplies and other power circuits, where its excellent switching characteristics offer improved efficiency and reliability. The device also offers low power dissipation, making it a great choice for low-loss applications.
The IPB65R150CFDAATMA1 is a great choice for many high-voltage, high-current and switching applications. Its excellent features and low on-resistance make it an ideal choice for demanding applications in the power industry. With its wide operating temperature range and high switching speed, the IPB65R150CFDAATMA1 is an attractive choice for a wide range of devices.
The specific data is subject to PDF, and the above content is for reference
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IPB65R380C6ATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 650V 10.6A TO... |
IPB60R099P7ATMA1 | Infineon Tec... | 1.85 $ | 1000 | MOSFET N-CH TO263-3N-Chan... |
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