Allicdata Part #: | IRFH5406TRPBFTR-ND |
Manufacturer Part#: |
IRFH5406TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 40A 8-PQFN |
More Detail: | N-Channel 60V 11A (Ta), 40A (Tc) 3.6W (Ta), 46W (T... |
DataSheet: | IRFH5406TRPBF Datasheet/PDF |
Quantity: | 4000 |
Vgs(th) (Max) @ Id: | 4V @ 50µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1256pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 14.4 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRFH5406TRPBF is a MOSFET that is built with a dynamic dV/dt rating, which makes it suitable for applications that requires rapid switching speeds. It also has a low gate threshold voltage, which allows it to be used in a wide range of voltage applications.
IRFH5406TRPBF Application Fields
As a high input impedance and fast switching power MOSFET, the IRFH5406TRPBF has many application fields. It is widely used in DC-DC converters, automotive electronics, power supplies, charging systems, motor drives, etc.
DC-DC converters using IRFH5406TRPBF can provide higher power density with smaller form factors in comparison with traditional linear circuit designs. In terms of motor drives and power supplies, the high input impedance of the IRFH5406TRPBF can provide the necessary voltage and reduce the need for bulky external components like discharge resistors and cascaded secondaries.
The fast switching of the IRFH5406TRPBF can also be beneficial in automotive electronics wherein it is used to switch high-side power transistor circuits. Moreover, the low capacitance of the IRFH5406TRPBF allows it to be used in applications with high switching speeds, providing the ideal solution for high power needs. It can be used in high voltage applications with voltages up to 600V.
Working Principle of IRFH5406TRPBF
The IRFH5406TRPBF is a N-channel MOSFET which works by the principle of input impedance. This means that the amount of electrical current that passes through the transistor is determined by the voltage applied across the gate-source pins of the transistor. The voltage applied across the gate-source pins of the transistor is known as the gate threshold voltage. When the applied voltage is higher than the threshold voltage, current flows through the transistor, otherwise, the transistor remains off.
The IRFH5406TRPBF also uses the principle of low capacitance. This means that the capacitance between the gate and source pins of the transistor is minimized, allowing it to handle high switching speeds and to minimize the need for bulky external components.
Finally, the IRFH5406TRPBF uses the principle of dynamic dV/dt rating. This means that the transistor has a wider range of usable voltages and current ratings, allowing it to handle higher power needs. The dynamic dV/dt rating also makes the transistor more reliable in applications with varying voltages and/or current ranges.
Conclusion
The IRFH5406TRPBF is a versatile MOSFET that is suitable for a wide range of applications that require high power, high input impedance and fast switching. Its low gate threshold voltage and low capacitance design allow it to be used in applications like DC-DC converters, automotive electronics, motor drives and power supplies with voltages up to 600V.
The specific data is subject to PDF, and the above content is for reference
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