IRFH7190ATRPBF

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IRFH7190ATRPBF Application Field and Working Principle

The IRFH7190ATRPBF is a depletion-mode N-channel field-effect transistor (FET) manufactured by International Rechip, Inc. It is an unmatched transistor that is available in an extremely small, space-saving SOT-223 package. The IRFH7190ATRPBF is ideal for use in portable, low-voltage, low-current and low-capacitance applications such as logic level shifting and power switching.

The IRFH7190ATRPBF is a high-density, low-voltage, power MOSFET. It is designed to minimize the on-state resistance of the device while providing superior switching performance. The device operates from 0.8V to 6V, making it suitable for a wide range of applications. The IRFH7190ATRPBF is designed to handle currents up to 2.5A and an operating temperature range of -40 °C to +125 °C. The device is also RoHS compliant and can be used in automotive applications.

Working Principle of IRFH7190ATRPBF

The working principle behind the IRFH7190ATRPBF is the same as that of any other MOSFET. It utilizes an electric field to control the flow of current between its source and drain terminals by varying the voltage applied to its gate terminal. When a voltage is applied to the gate terminal, it creates an electric field between its source and drain terminals, which then affects the conductance of the device, allowing it to be used for switching or for current amplification. The IRFH7190ATRPBF is a depletion-mode device, meaning that its drain current is dependent on the gate-source voltage being less than the threshold voltage. This reduces the need for an applied voltage to keep the transistor turned off, meaning it can be used in low-voltage applications.

Applications of IRFH7190ATRPBF

The IRFH7190ATRPBF has a wide range of applications due to its low-voltage, low-current, and low-capacitance design. It is commonly used in logic level shifting, power switching, and motor control applications. It is also suitable for use in low-voltage, low-power analog and digital circuits. In addition, the IRFH7190ATRPBF is tailored for automotive applications, making it an ideal choice for those looking to apply it in a harsh environment. Due to its high-current rating, the device is also well suited for high-definition audio amplifiers. Furthermore, its small package size makes it highly desirable for use in space-constrained applications.

Conclusion

The IRFH7190ATRPBF is a depletion-mode N-channel FET that is perfectly suited for low-voltage, low-current, and low-capacitance applications. It offers superior switching performance while minimizing the on-state resistance of the device. It is commonly used in logic level shifting, power switching, and automotive applications. The device is well suited for high-definition audio amplifiers and space-constrained applications due to its small package size and high-current rating.

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