IRFH8337TR2PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IRFH8337TR2PBF is a N-channel trench-gate metal oxide semiconductor field-effect transistor(MOSFET), designed and manufactured by Infineon Technologies. It is a bridgeFET device, and features very low on-state resistance, which can improve power efficiency and reduce power losses.

The basic structure of an MOSFET consists of four terminal electrodes, namely Source (S), Gate (G), Drain (D), and Body (B). Depletion-mode MOSFETs (also known as enhancement-mode MOSFETs) only work when an electric field is applied to the gate. The source is connected to the negative terminal of the voltage source, and the drain is connected to the positive terminal of the voltage source. When the gate is charged, a negative electric field is created that attracts electrons from the source toward the drain. This creates a conductive pathway between the source and the drain for electrical current or charge carriers.

The IRFH8337TR2PBF features a high-current flow, lowgate charge, low input capacitance, as well as low on-state resistance. This makes it ideal for applications like switching and amplification, in which very low voltage is needed. Its low on-state resistance contributes to less power dissipation, meaning it can offer greater efficiency. In addition, its low gate charge makes it suitable for fast switching applications, while its low input capacitance prevents it from slowing down the frequency of the signal.

The IRFH8337TR2PBF is capable of fast switching, low power operation, and high current amplifications. It is primarily used in high-frequency power transformer, DC/DC converter, inverter, and switching regulator applications. Its low ON-resistance and high current drive capability also makes it well-suited for industrial and automotive applications. Moreover, its low input capacitance makes it ideal for noise-free communication systems. The IRFH8337TR2PBF is a suitable solution for designing efficient high-power, high-frequency applications.

The working principle of the IRFH8337TR2PBF is the same as that of other MOSFETs. When the transistor is placed in an active-high mode, application of a voltage to the gate causes electrons to be drawn from the source to the drain. This creates an electric current between the source and the drain, allowing a charge to move from one point to another. Once the gate voltage is removed, the current stops flowing, and the transistor returns to its off-state. In an active-low mode, a similar thing occurs, but this time the gate voltage is applied to the source instead of the drain, and it works in the opposite direction.

In summary, the IRFH8337TR2PBF is a low-power, low-on-resistance, and high-frequency MOSFET transistor. It is suitable for high-power, high-frequency applications, such as switching and amplification. Its fast switching capability and low gate charge make it ideal for use in noise-free communication systems. Furthermore, its low input capacitance prevents it from slowing down the frequency of the signal.

The specific data is subject to PDF, and the above content is for reference