| Allicdata Part #: | IRFHM831TR2PBFCT-ND |
| Manufacturer Part#: |
IRFHM831TR2PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 14A PQFN |
| More Detail: | N-Channel 30V 14A (Ta), 40A (Tc) 2.5W (Ta), 27W (T... |
| DataSheet: |  IRFHM831TR2PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | PQFN (3x3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 27W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 7.8 mOhm @ 12A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 14A (Ta), 40A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Cut Tape (CT) |
Description
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IRFHM831TR2PBF is a type of Field Effect Transistor (FET) used frequently in electronics applications. Specifically, it is a Metal Oxide Semiconductor FET (MOSFET). The particular version of a MOSFET that is offered under the part number IRFHM831TR2PBF is of the single variety.
A FET is a type of transistor that controls the switching of current by using an electric field. This is different from the traditional Bipolar Junction Transistor (BJT) type, which has two base terminals that control the current by using current. Unlike diodes, a FET is an unipolar component, as it is composed of only one type of semiconductor material. This makes them more efficient by reducing conductance when not in use.
The particular type of FET offered in the IRFHM831TR2PBF is a MOSFET. MOSFETs are particularly advantageous over other FETs because they are immune to thermal runaway, have a low input capacitance, and have a threshold voltage lower than other FETs. MOSFETs are also extremely reliable in a wide variety of applications.
The specific part number IRFHM831TR2PBF is a single variety of MOSFET, which means that it contains one gate. The gate terminal is a crucial component of a FET, as it is responsible for controlling the voltage that is applied to the terminal. The IRFHM831TR2PBF\'s single gate is able to sustain an input voltage of 200 volts, while still providing an output current of 5 amps. This makes it ideal for a variety of applications, including commutation, motor control, light dimming, and other high power applications.
The working principle behind the IRFHM831TR2PBF is based on the same principles as other FETs. It consists of a set of tightly packed metal oxide semiconductor junctions that act as a field effect transistor. A gate terminal is provided at one end, which allows an input voltage to be applied. This voltage then creates an electric field that opens or closes the junction depending on its nature. This allows current to flow through the device and provides the switching effect that FETs are known for.
The IRFHM831TR2PAF is used in many different applications in the electronics world, mostly for high power applications. It is used for many tasks, such as motor control, commutation, light dimming, and more. It is extremely reliable, as it is immune to thermal runaways and has a low input capacitance. The single gate allows for an input voltage of 200volts, while still providing an output current of 5 amps.
In conclusion, the IRFHM831TR2PBF is a type of MOSFET that is used in many different applications in the electronics world. It is composed of a single gate that can handle an input voltage of 200 volts, while still providing an output current of 5 amps. It is ideal for motor control, commutation, light dimming, and other high power applications. Understanding the working principle and application field of this part is essential for any electronics enthusiast.
The specific data is subject to PDF, and the above content is for reference
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