IXTP180N085T

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The IXTP180N085T is a type of discrete power Field Effect Transistor (FET). Its application fields are versatile and highly effective, making them a preferred choice for a variety of power management applications, from pulse width modulation and linear regulation circuits, to audio amplifiers and Class D amplifiers.

The IXTP180N085T provides a very low gate-source capacitance and a very low on-state resistance in order to promote extremely high frequencies, with the on-state resistance value reaching as low as 0.01 Ohm. It is also highly resistant to resulting parasitic oscillations in the circuit. The advantages of the IXTP180N085T include excellent audio fidelity, high frequency switching, high gain, low noise performance, as well as high input impedance.

The working principle of an IXTP180N085T is the same as that of any other FET, but the IXTP180N085T has many distinct advantages that make it ideal for a variety of applications. In a nutshell, FETs, or Field-Effect Transistors, are voltage-controlled devices that are widely used in applications ranging from power management to audio amplification. They work by using two metal plates (the “gate” and the “drain”) that are separated by a thin layer of insulation (the “channel”).

When a voltage is applied to the gate, the thin layer of insulation acts as a conductive pathway that allows the flow of current between the drain and source plates. This current creates a magnetic field around the metal plates and affects the current flow between the source and drain plates. The more voltage that is applied to the gate, the more current flows between the source and drain. This action is what is used to perform tasks such as power regulation and other power switching tasks.

At the same time, the IXTP180N085T has many features that make it ideal for a variety of applications. It features an enhanced RDS(ON) that reduces internal stress, inductance, and switching losses. Also, its low gate-source capacitance and high electromagnetic interference immunity makes it a great choice for applications that are sensitive to EMI. It also has excellent tolerance of transient power supply fluctuations, as well as a wide operating temperature range from –55 to +175 degrees Celsius.

In comparison to other FETs, the IXTP180N085T has lower gate switch-on and gate switch-off times. This characteristic makes it a great choice for applications that require a fast response, such as pulse width modulation or linear voltage regulation.

In conclusion, the IXTP180N085T is an excellent choice for a variety of applications that require power regulation, pulse width modulation and linear voltage regulation. Its low gate-source capacitance and low on-state resistance make it an ideal choice for applications that are sensitive to EMI and require fast response. Its excellent tolerance of transient power supply fluctuations and wide operating temperature range make it an excellent choice for a variety of applications.

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