IXTP24P085T Allicdata Electronics
Allicdata Part #:

IXTP24P085T-ND

Manufacturer Part#:

IXTP24P085T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 85V 24A TO-220
More Detail: P-Channel 85V 24A (Tc) 83W (Tc) Through Hole TO-22...
DataSheet: IXTP24P085T datasheetIXTP24P085T Datasheet/PDF
Quantity: 169
Stock 169Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Series: TrenchP™
Rds On (Max) @ Id, Vgs: 65 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 85V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTP24P085T is an advanced enhancement-mode Power MOSFET from IXYS Corporation\'s advanced IO-Link series. This advanced MOSFET has a small 1.2mm by 2.54mm footprint and is ideal for applications requiring a low on-resistance, high power dissipation, and low voltage operation. The IXTP24P085T is designed to be used in high-performance analog and digital circuits, switching power supplies, motor controllers, and other applications requiring high-speed switching and fast switching times. The IXTP24P085T is suitable for use in high current, low voltage, voltage regulator, and power management applications.

The IXTP24P085T is a N-channel power MOSFET and is characterized by its low on-resistance (Rdson), high power dissipation, and low on-state current. It has a drain-source breakdown voltage of 35V, a gate-source threshold voltage of 4V, an absolute maximum rating of 70A for pulsed drain current, and an internal capacitance of 625pF. The device is housed in a small 1.2mm by 2.54mm leadless MSOP8 package with a profile of 2.54mm and 50 mils pitch. It is also RoHS compliant and relative humidity tolerant.

The IXTP24P085T features a low on-resistance of 4.5 ohms, a maximum drain-source breakdown voltage of 4V, and a low gate-source threshold voltage of 0.8V. It also has a high maximum drain current of 70A (pulsed) and a maximum power dissipation of 150W. Additionally, the IXTP24P085T has an ESD tolerance of 1.5KV and a gate-source maximum voltage of -3V.

The working principle of the IXTP24P085T is based on the operation of an n-channel MOSFET. In this device, the gate is electrically isolated from the rest of the components. When a positive voltage is applied to the gate, a current flow is created between the drain and source, allowing the controlled conduction of current through the device. The device exhibits the same electrical characteristics whether used as an enhancement-mode or depletion-mode device.

The IXTP24P085T can be used in a variety of applications requiring fast, low-voltage switching. It is an ideal solution for PWM controllers, motor drives, bridge drivers, transistors and other switching power supplies. Additionally, it is suitable for use in DC-DC converters, low-side switches, high-side switches, various automotive applications, and other medium power applications needing fast switching time.

The IXTP24P085T is a versatile high performance power MOSFET with low on-resistance, high power dissipation, and low voltage operation. Its small 1.2mm by 2.54mm footprint makes it ideal for use in small designs, while its ESD protection and relative humidity tolerance make it suitable for use in various applications. Its low gate-source threshold voltage and drain-source breakdown voltage make it well suited for medium power and low voltage switching applications.

The specific data is subject to PDF, and the above content is for reference

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