Allicdata Part #: | IXTP48N20T-ND |
Manufacturer Part#: |
IXTP48N20T |
Price: | $ 2.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 200V 48A TO-220 |
More Detail: | N-Channel 200V 48A (Tc) 250W (Tc) Through Hole TO-... |
DataSheet: | IXTP48N20T Datasheet/PDF |
Quantity: | 100 |
1 +: | $ 2.04750 |
50 +: | $ 1.64644 |
100 +: | $ 1.50009 |
500 +: | $ 1.21470 |
1000 +: | $ 1.02444 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTP48N20T is a type of N-channel, enhancement-mode, insulated gate field effect transistor (IGFET), also known as an insulated gate bipolar transistor (IGBT). It features an internal gate buffer which provides high turn on/off speed and low gate charge. IXTP48N20T devices are well-suited for applications requiring fast switching, low loss and high power.
If one is familiar with the working principle of field effect transistors (FETs), then the working of IXTP48N20T is easy to understand. In this device, a bias voltage is applied between the gate and source terminals so as to control the current flowing through the device. The threshold voltage of the device is determined by the voltage applied between the gate and drain terminals. When the gate-source bias voltage is greater than the threshold voltage, the device is turned on, allowing current to flow from source to drain. When the gate-source bias voltage is less than the threshold voltage, the device is turned off, preventing current from flowing through the device.
IGFETs have a wide range of applications. For example, they are commonly used in power circuit switching, voltage regulation, motor control, HVAC/AC motor control, high power audio amplification, power supplies, and switch mode supplies. IXTP48N20T transistors provide excellent high-speed characteristics and high-current carrying capacity which are very useful for these applications. Furthermore, the low gate charge of the IXTP48N20T makes it suitable for high-frequency applications.
In addition to power switching applications, IXTP48N20T transistors can also be used for RF circuit applications such as impedance matching and signal conditioning. The high input impedance of the IXTP48N20T transistors enables them to be used as RF switches which can be used to control the gain of an RF signal. The low input capacitance of IXTP48N20T also makes it suitable for applications where low distortion is desired. Other applications of IXTP48N20T transistors include high-voltage circuits, medical instrumentation, communications, and robotics.
In conclusion, IXTP48N20T transistors are well-suited for high-speed, high-power switching applications. Their high-current carrying capacity, low gate charge, and wide range of applications make them particularly attractive for a variety of applications. Furthermore, IXTP48N20T are capable of operating at high frequencies, making them suitable for RF circuits as well.
The specific data is subject to PDF, and the above content is for reference
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