Allicdata Part #: | IXTP70N085T-ND |
Manufacturer Part#: |
IXTP70N085T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 85V 70A TO-220 |
More Detail: | N-Channel 85V 70A (Tc) 176W (Tc) Through Hole TO-2... |
DataSheet: | IXTP70N085T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 50µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 176W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2570pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 59nC @ 10V |
Series: | TrenchMV™ |
Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 85V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXTP70N085T is a high voltage Power MOSFET designed to improve thermal performance, enabling higher current drive and improved switching speed. It is an ideal solution for high voltage power conversion applications such as AC-DC power supplies, lighting, motor control, and other regulated power solutions.
The IXTP70N085T utilizes an N-channel MOSFET that has a maximum drain-source voltage (Vds) of 800 V, a minimum drain current (Id) of 85 A, a drain-source on-state resistance (RDS(on)) of 0.7 mΩ and a maximum continuous gate-source voltage (VGS) of ±20 V. It is designed to operate in temperatures up to 175°C, with a maximum channel temperature of 165°C.
Application Field
The IXTP70N085T power MOSFET provides a single source of high voltage power conversion. Its extremely high-current drive capabilities enable efficient switching of large loads and therefore, it is particularly suitable for use in AC-DC power supplies, heavy-load motor control applications, lighting control, and other regulated power solutions.
Its high current drive and fast switching speeds enable the IXTP70N085T to be used as a replacement for traditional, slower-switching devices in power supplies, cutting power loss and improving overall efficiency. Its low RDS(on) allows for improved power dissipation.
Furthermore, the IXTP70N085T is designed to work in extreme temperatures up to 175°C and is an ideal solution for high-temperature applications. Its high channel temperature rating allows the device to dissipate heat more efficiently and avoid reliability issues.
Working Principle
The IXTP70N085T is an N-channel MOSFET that operates in the enhancement mode. That is, transistor action can be achieved only when a voltage is applied to its gate terminal. When the gate voltage is raised above a certain threshold level, current starts to flow between the drain and the source.
When this voltage is negative, the transistor is in cutoff mode, and no current may pass between the drain and the source. As the gate voltage increases, the drain-source current (Id) increases exponentially. When the gate voltage is positive, the transistor is in saturation mode, and the drain-source current (Id) is relatively stable and independent of the gate voltage.
The IXTP70N085T is designed to work in high-voltage and high-current applications, combining the two key factors that define power MOSFETs: voltage and current. The device is optimized for both low on-resistance (RDS(on)) and high transient current (dI/dt), allowing for efficient power conversion.
In summary, the IXTP70N085T power MOSFET combines a wide range of features and performance characteristics including high voltage operation, high current drive, fast switching speeds, low on-resistance (RDS(on)), and high channel temperature, making it an ideal solution for high voltage power conversion applications.
The specific data is subject to PDF, and the above content is for reference
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