Allicdata Part #: | IXTP70N075T2-ND |
Manufacturer Part#: |
IXTP70N075T2 |
Price: | $ 1.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 75V 70A TO-220 |
More Detail: | N-Channel 75V 70A (Tc) 150W (Tc) Through Hole TO-2... |
DataSheet: | IXTP70N075T2 Datasheet/PDF |
Quantity: | 84 |
1 +: | $ 1.34820 |
50 +: | $ 1.08675 |
100 +: | $ 0.97808 |
500 +: | $ 0.76073 |
1000 +: | $ 0.63032 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2725pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXTP70N075T2 is a field effect transistor (FET) designed for advanced power switching applications such as digital switching and high-speed a/b systems. This advanced device utilizes a special design of FET technology to improve performance parameters such as switching speed and on-resistance. It is a single N-type MOSFET with 75V drain-source voltage (VDS). It offers ultra high-speed switching times of up to 22ns, low rDS(on) of 0.68Ω, and high rugged gate turn-on threshold voltage of 3V. The IXTP70N075T2 also has low gate capacitance, excellent dv/dt capability, and moderate gate drive requirements.
The IXTP70N075T2 is a very powerful and reliable FET device which operates in the depletion mode. It can be used in applications such as digital logic, medical devices, and power management circuits. It is suitable for use in both commercial and industrial applications. The device is designed for maximum efficiency and reliability and is available in several different package options, such as a DPAK, SOP, and TO-220 variants. It can also be used in applications where both high speed switching and low on-resistance are desired.
The IXTP70N075T2 has two main operating regions, the linear region and the saturation region. In the linear region, the device behaves like a resistor, with Ids (drain current) linear to Vgs (gate voltage) and Ids is proportional to Vds (drain-source voltage). This linear region allows the device to be used in applications such as current source and current limit. In the saturation region, the device behaves as a switch, where the drain current increases almost exponentially with increase in the gate voltage. In this region, the FET can be used as an electronic switch.
The device is also characterized by its source-drain breakdown voltage and its gate threshold voltage. The source-drain breakdown voltage (BVds) is the maximum voltage that can be applied between the source and drain before the device breaks down. The gate threshold voltage (Vth) is the voltage required on the gate to turn on the device. If the voltage on the gate is lower than the threshold voltage, the device will remain off, otherwise it will be switched on.
The device has an avalanche energy rating of 30mJ which is the maximum energy that can be applied to the drain before the device has to be replaced. Additionally, it is capable of handling high forward and reverse transient currents, making it a suitable device for use in high-current applications. The device also offers improved thermal characterizations, making it ideal for applications requiring high power dissipation.
IXTP70N075T2 is an advanced single FET device with improved performance parameters. It offers high-speed switching, low rDS(on), improved thermal characteristics, and low gate capacitance. The device is suitable for high-current and high-power applications, and can be used as an electronic switch. It is available in several package options, such as DPAK, SOP, and TO-220, and can be used in both commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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IXTP70N075T2 | IXYS | 1.48 $ | 84 | MOSFET N-CH 75V 70A TO-22... |
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IXTP200N055T2 | IXYS | -- | 101 | MOSFET N-CH 55V 200A TO-2... |
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IXTP1R4N60P | IXYS | 0.0 $ | 1000 | MOSFET N-CH 600V 1.4A TO-... |
IXTP152N085T | IXYS | -- | 1000 | MOSFET N-CH 85V 152A TO-2... |
IXTP160N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 160A TO-2... |
IXTP160N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 160A TO-2... |
IXTP180N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 180A TO-2... |
IXTP180N085T | IXYS | -- | 1000 | MOSFET N-CH 85V 180A TO-2... |
IXTP182N055T | IXYS | -- | 1000 | MOSFET N-CH 55V 182A TO-2... |
IXTP200N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 200A TO-2... |
IXTP200N085T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 85V 200A TO-2... |
IXTP220N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 220A TO-2... |
IXTP220N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 220A TO-2... |
IXTP240N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 240A TO-2... |
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IXTP55N075T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 75V 55A TO-22... |
IXTP64N055T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 55V 64A TO-22... |
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