Allicdata Part #: | IXTP05N100M-ND |
Manufacturer Part#: |
IXTP05N100M |
Price: | $ 1.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 700MA TO-220 |
More Detail: | N-Channel 1000V 700mA (Tc) 25W (Tc) Through Hole T... |
DataSheet: | IXTP05N100M Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.63019 |
Vgs(th) (Max) @ Id: | 4.5V @ 25µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 17 Ohm @ 375mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 700mA (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP05N100M bipolar junction transistor (BJT) is a type of semiconductor device that is used for a range of applications including power switching, amplifying and logic circuit applications. This type of transistor is a field-effect transistor (FET), which means it forms a control gate around a source and drain terminal that are separated by an oxide layer. This oxide layer can be used as an insulating barrier between the drain and source terminal, allowing the FET to be used as a voltage-controlled switch. The IXTP05N100M is a depletion-mode FET, which means that the gate voltage affects the amount of current that can flow between the source and the drain.
The IXTP05N100M is designed to operate at higher frequencies than other transistors, making it a good choice for applications that require higher switching speeds. It is also an efficient device for use in power circuits, as it has a low “on” resistance, meaning that it can be used as an effective power switch in high power systems. These characteristics make the IXTP05N100M a good choice for applications such as motor controllers, solar inverters, power supplies and uninterruptible power supplies (UPSs).
The working principle of the IXTP05N100M is quite simple. When the gate voltage is low (less than the “threshold voltage”), the transistor is off and no current flow occurs between the source and the drain. When the gate voltage exceeds the threshold voltage, the channel between the source and the drain opens and current flows. This action makes the IXTP05N100M an efficient device for controlling current flow in a circuit.
Another advantage of the IXTP05N100M is its robust design. It is designed to draw a very low “gate charge”, which means that it takes very little energy to switch it on or off. This reduces the total energy required to operate the circuit, improving efficiency and reducing power consumption. The IXTP05N100M also has a very low “on” resistance, making it an effective device for power switching applications. This makes it an ideal choice for applications where a high current needs to be switched quickly.
The IXTP05N100M is a useful device for a variety of applications including power switching, motor control and UPS applications. Its low “on” resistance allows it to be used as an effective power switch, while its low gate charge makes it an efficient device. Furthermore, its robust design means that it can be used in high-power applications without fear of damaging the device.
The specific data is subject to PDF, and the above content is for reference
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