Allicdata Part #: | IXTP05N100P-ND |
Manufacturer Part#: |
IXTP05N100P |
Price: | $ 1.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 500MA TO-263 |
More Detail: | N-Channel 1000V 500mA (Tc) 50W (Tc) Through Hole T... |
DataSheet: | IXTP05N100P Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.23165 |
Vgs(th) (Max) @ Id: | 4V @ 50µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 196pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.1nC @ 10V |
Series: | Polar™ |
Rds On (Max) @ Id, Vgs: | 30 Ohm @ 250mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP05N100P is an Insulated Gate Bipolar Transistor (IGBT) module with a maximum collector current of 100 Amps. The IGBT module is used in industrial and commercial applications, such as motor control, lighting, and power conversion. This article explains the application field and working principle of the IXTP05N100P.
The IXTP05N100P is a high-power IGBT module, making it suitable for control applications which require high current or voltage. In addition to this, it also offers excellent frequency response and low switching loss. The module’s collector current can be up to 100 Amps, and its maximum voltage can be up to 50 V. It also has a wide operating temperature range of -25 to +85 degrees centigrade, making it suitable for applications that operate in harsher environments.
The excellent performance of the IXTP05N100P makes it ideal for industrial and commercial applications, such as motor control, lighting, and power conversion. The module can be used in variable-frequency drive (VFD), variable-speed drive (VSD), or wind turbine applications. It can also be used in adjustable-speed traction, or in any application which requires high current or voltage. The power module can also be used to control the switching of DC or AC motors, or to drive LED lights.
The IXTP05N100P is a single-mode IGBT module. It uses a Insulated Gate Bipolar Transistor (IGBT) which is a voltage-controlled semiconductor device. It combines a traditional MOSFET\'s voltage controlled gate with the low on-state characteristics and the high current-carrying capability of a bipolar power transistor. This device has two terminals, the insulated gate and the collector. When a voltage is applied to the insulated gate, it creates an electric field which controls the current flow between the collector and the emitter. The IGBT has a high input impedance, which allows it to switch rapidly, and a low on-state voltage drop, which helps to reduce power loss.
Overall, the IXTP05N100P is an excellent power module for industrial and commercial applications. Its high current rating and low switching loss makes it suitable for demanding applications. Its insulated gate and collector terminals allows for rapid switching and low power loss. This IGBT module is ideal for motor control, lighting, power conversion and other applications.
The specific data is subject to PDF, and the above content is for reference
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