IXTP08N120P

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	333pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 10V
Series:	Polar™
Rds On (Max) @ Id, Vgs:	25 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	800mA (Tc)
Drain to Source Voltage (Vdss):	1200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IXTP08N120P is an enhancement mode N-channel MOSFET.It is a field-effect transistor with excellent switching characteristics, suited for both high-frequency and low-frequency operation. It is widely used in a variety of applications including motor control, industrial and automotive control, and power conversion. Its enhanced thermal performance and lower gate charge makes it the ideal choice for inductive loads and high switching frequencies.The IXTP08N120P has a maximum drain source voltage rating of 800V, a maximum drain current rating of 120A and is available in a TO-220 housing type. It also features a high dv/dt capability, low RDS(on) and minimal input capacitance, which makes it well suited for switch mode power supplies where faster switching speeds, improved reliability and design flexibility are essential.The main working principle of the IXTP08N120P is that it uses the gate-channel region of the device which acts as a control element. When the gate-source voltage of the device is increased, electrons are able to pass through the channel region and flow from the drain to the source. This in turn increases the current from the drain to the source and the device is said to be in the “on” state. Similarly, when a negative voltage is applied to the gate-source region, then the number of electrons that are able to pass through the channel region decreases and the device is said to be in the “off” state.The IXTP08N120P has a wide range of applications including power supplies, DC-to-DC converters, motor control, industrial and automotive control, and various power conversion circuits. In motor control applications, the IXTP08N120P is used in a variety of applications such as AC motor drives and DC motor drives. It is also used in various industrial and automotive control circuits such as motor starters and actuators.The IXTP08N120P is also used in applications where high switching speed and flexibility of design are essential. It is an ideal choice for power supplies and DC-to-DC converters as it has low gate charge and low input capacitance. Therefore, the device is able to switch rapidly between the “on” and “off” state and has a high dv/dt capability.The IXTP08N120P is a popular choice among engineers due to its high-frequency performance and excellent thermal characteristics. It is also able to handle inductive loads, making it well suited for applications such as DC-DC converters, motor control and industrial control. It also has a maximum saturation voltage rating of less than 0.2V and a low RDS(on).In conclusion, the IXTP08N120P is an enhancement mode N-channel MOSFET designed for various applications, such as power supplies, DC-to-DC converters, motor control, industrial and automotive control, and power conversion circuits. It features high-frequency performance, improved reliability and low saturation voltage. Its enhanced thermal performance and low gate charge make it the ideal choice for inductive loads and high switching frequencies.

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