Allicdata Part #: | IXTP110N055P-ND |
Manufacturer Part#: |
IXTP110N055P |
Price: | $ 2.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 55V 110A TO-220 |
More Detail: | N-Channel 55V 110A (Tc) 390W (Tc) Through Hole TO-... |
DataSheet: | IXTP110N055P Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.95615 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 390W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2210pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 76nC @ 10V |
Series: | PolarHT™ |
Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Introduction
The IXTP110N055P is a single enhancement mode N-channel Field Effect Transistor (FET). It is designed for low-power switching applications with fast switching capabilities, making it great for demanding applications such as AC drives and motor control. The IXTP110N055P also has low-resistance (RDS=55mΩ at VGS=4.5V) which means fewer losses and higher performance. In addition, the IXTP110N055P is RoHS compliant and offers a high degree of ESD protection, which makes it suitable for a wide range of applications.
Application Field
The IXTP110N055P has been designed for a wide range of low-power switching applications, especially those that require a fast switching speed. Examples of such applications include AC drives, motor control, power management, telecommunications, and computer peripherals. The IXTP110N055P can also be used in a variety of other small signal applications due to its low on-resistance and fast switching speed.
Working Principle
The working principle of the IXTP110N055P is based on the Field Effect Transistor (FET) structure. In this structure, the electrical operation is based on the actions of electrons in a semiconductor material between source and drain junctions. In the IXTP110N055P, the operation is based on a N-channel FET. This means that its voltage gates are connected to the N-type region (N-channel) of the FET.When a positive voltage is applied to the gate, electrons from the N-channel region repel and move away from the gate into the P-type region, creating a transistor-like region. This allows for current to flow from the source to the drain. On the other hand, when the voltage is removed from the gate, the electrons from the N-type region return to the gate and the P-type region is depleted, thus cutting off current flow and turning the FET off. The IXTP110N055P also features a very low resistance of 55mΩ at VGS=4.5V, which helps reduce power losses and offers higher efficiency. In addition, the fast switching speed of the IXTP110N055P makes it ideal for high-performance applications such as AC drives and motor control.
Conclusion
The IXTP110N055P is a single N-channel Field Effect Transistor (FET) designed for a wide range of low-power switching applications with fast switching capabilities. It has a very low resistance of 55mΩ at VGS=4.5V and excellent ESD protection, allowing it to be used in a variety of applications. Its fast switching speed makes it ideal for demanding applications such as AC drives and motor control.
The specific data is subject to PDF, and the above content is for reference
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