Allicdata Part #: | IXTP230N04T4-ND |
Manufacturer Part#: |
IXTP230N04T4 |
Price: | $ 1.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 40V 230A (Tc) 340W (Tc) Through Hole TO-... |
DataSheet: | IXTP230N04T4 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.70264 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 340W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7400pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Series: | TrenchT4™ |
Rds On (Max) @ Id, Vgs: | 2.9 mOhm @ 115A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 230A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTP230N04T4 is a high-voltage N-Channel power MOS (Metal Oxide Semiconductor) FET (field-effect transistor) that can be applied in a variety of electronic devices. The metal–oxide–semiconductor field-effect transistor (MOSFET) is one of the principal electricity-maneuvering components used in modern electronic design and has become the fundamental building block of many digital circuits. As with all FETs, the IXTP230N04T4 operates by creating a conductive channel between its source and drain electrodes. It is capable of high switching frequencies and is considered to be a high-current, low-temperature, high-reliability power device.
The IXTP230N04T4\'s source and drain electrodes are connected to the silicon substrate that makes up the body of the transistor. The substrate is also home to an oxide layer, which serves as an insulator between the source and drain. The oxide layer allows only a certain amount of current to pass between the two electrodes. In this way, the IXTP230N04T4 is able to accurately control the current flow between the source and drain electrodes.
The IXTP230N04T4 is used mainly in high-voltage applications, such as in power supplies, DC-DC converters, and motor drives. It is designed to provide excellent efficiency, tremendous power density, and low output voltage ratings. It can be used to control both the current flow and voltage in the circuit and is often found in high-power applications.
The IXTP230N04T4 is able to provide superior performance due to its robust design. It features a low drain-source on-resistance (Ron), a high breakdown voltage (BVdss), a large current carrying capacity (Ids), and a low threshold voltage (Vth). The device also has a low capacitance (Cds) across its source and drain electrodes, making it ideal for applications that require high switching frequencies.
The IXTP230N04T4 is a great option for those looking for a reliable and efficient power switching device. Its low on-resistance, high drain-source breakdown voltage, large current carrying capacity, and low capacitance make it an excellent choice for a wide range of applications. In addition, its low threshold voltage and high switching speed ensure that it will provide superior performance in high-power applications.
The specific data is subject to PDF, and the above content is for reference
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