IXTP270N04T4

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	375W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9140pF @ 25V
Vgs (Max):	±15V
Gate Charge (Qg) (Max) @ Vgs:	182nC @ 10V
Series:	TrenchT4™
Rds On (Max) @ Id, Vgs:	2.4 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	270A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTP270N04T4 Application Field and Working Principle
IXTP270N04T4 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is the metal-oxide-semiconductor field-effect transistor (MOSFET) that is the most widely used semiconductor device with low input and high output impedance, low noise, and excellent switching characteristics.IXTP270N04T4 is a single N-channel device and can be used as an electronic switch, an amplifier and as a voltage regulator. It is commonly found in audio amplifiers, digital-to-analog converter (DAC) circuits, and DC-to-DC converters. It is also used in power supplies, motor control circuits and in diode-bridge rectifiers. In addition, IXTP270N04T4 MOSFETs can also be used in many medical devices, such as in electrocardiographs and pulse oximeters.The IXTP270N04T4 is a vertical DMOSFET (VDSMOSFET) device with a threshold voltage of 6 volts, drain-source current of 276 mA, drain-source voltage of 40V and total power dissipation of 2W. In addition to this, the IXTP270N04T4 also has a maximum operating temperature of 75°C and a total gate-source capacitance of 2.4nC.The working principle of IXTP270N04T4 is based on the modified version of MOSFET architecture. This type of device has a source and a drain region, as well as a gate. The gate is usually made of insulated gate material and is used to control the voltage at the source and drain terminals. The source region is positively charged while the drain region is negatively charged. When a voltage is applied to the gate, it acts like an open switch and allows the electric current to flow between the source and the drain region.The IXTP270N04T4 is incredibly versatile and can be used in a variety of electronic circuits and applications. Its compact size and high power dissipation capability combined with its low gate capacitance makes it a perfect choice for high-frequency circuits and other demanding applications. Its low input and high output impedance also make it a great device for power switching applications.In addition to its versatility, IXTP270N04T4s are relatively inexpensive and widely available. The device is also easily handled and lightweight, which makes it easier to work with when compared to other types of transistors.Overall, IXTP270N04T4 is an excellent choice for a variety of applications. Its versatility, affordability and easy availability make it a great choice for a wide range of applications. Its unique architecture, low input and high output impedance, and high power dissipation capability are just a few of the reasons why IXTP270N04T4 is a popular choice when it comes to transistor devices.

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