IXTP2R4N120P Allicdata Electronics
Allicdata Part #:

IXTP2R4N120P-ND

Manufacturer Part#:

IXTP2R4N120P

Price: $ 3.26
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1200V 2.4A TO-220
More Detail: N-Channel 1200V 2.4A (Tc) 125W (Tc) Through Hole T...
DataSheet: IXTP2R4N120P datasheetIXTP2R4N120P Datasheet/PDF
Quantity: 1000
50 +: $ 2.93429
Stock 1000Can Ship Immediately
$ 3.26
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1207pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Series: Polar™
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTP2R4N120P is a single-channel, insulated-gate bipolar transistor (IGBT) based on a type of insulated gate field effect transistor (IGFET) technology. It is designed to operate at a maximum current of 46 A.

The IXTP2R4N120P is typically used in inverter drive applications such as motor drives, air conditioning, and lighting control. It is also suitable for applications where a high switching speed is required, including switching power supplies and AC motor drives. It has low standby power consumption and is suitable for low voltage dc-dc converters.

The IXTP2R4N120P is composed of two parts: the gate electrode and the collector electrode. The gate electrode controls the current flow through the transistor. It is the external control input of the device. When voltage is applied to the gate electrode, the threshold voltage is exceeded, and the electrical current can flow through the transistor. The collector electrode is the output of the device, and is connected to a load, such as a motor.

The IXTP2R4N120P works by creating an electric field between the gate and the collector. This electric field is generated by the application of a voltage to the gate electrode, which then attracts electrons from the collector and out of the transistor. The amount of current flow is proportional to the voltage applied to the gate. As the voltage increases, the current flow increases. This is the basic principle of operation of the IXTP2R4N120P. In order for the IGBT to turn off, the voltage applied to the gate is reduced, which reduces the electric field between the gate and the collector, and the current flow is reduced.

The IXTP2R4N120P is a fast switching device, with a typical turn-on and turn-off time of 15 ns. This makes it suitable for use in high-speed switching applications, such as pulse-width modulation (PWM) switching, or the control of AC motor drives. It also has a very low saturation voltage, which makes it suitable for low voltage dc-dc converters.

The IXTP2R4N120P is a versatile single-channel device, with a wide range of applications in high-power control applications. It is suitable for use in a range of high-power applications, including inverter drives, switching power supplies and AC motor drives. In addition to its high power capabilities, it is also suitable for low voltage dc-dc converters, due to its low saturation voltage. Its fast switching speed makes it suitable for high-speed switching applications, such as PWM switching, or the control of AC motor drives.

The specific data is subject to PDF, and the above content is for reference

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