IXTP86N20T

Vgs(th) (Max) @ Id:	5V @ 1mA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	480W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4500pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	90nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	29 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	86A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXTP86N20T Application Field and Working Principle

The IXTP86N20T is a device in the family of single MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) from IXYS Corporation. It is a vertical N-channel MOSFET transistor that is ideally suited for automated surface mount assembly using vapor phase, infrared, wave and reflow techniques. This device is particularly suited for applications requiring low on-resistance, high current density and high breakdown voltage.The IXTP86N20T is a vertical N-channel MOSFET transistor with a built-in charge-balanced P+ polysilicon gate structure. It is specifically designed to have a low on-resistance, high current density, and high breakdown voltage. It offers superior performance in applications such as power supplies, motor drives, lighting and switch mode power supplies, etc. It also supports applications such as high-end server power supply: multi-core, multi-threaded servers, and other enterprise applications.The IXTP86N20T’s design provides a reliable and efficient power solution. It also offers superior cost savings as it uses a simple vertical structure instead of the more complex or expensive lateral devices. It has been proven to be a reliable and efficient device in many applications due to its low on-resistance and tight RDS(on) distribution. It also offers fast switching, low gate charge and high maximum drain current capability.Safety is an essential feature of the IXTP86N20T as it incorporates an advanced on-chip ESD protection circuit. The ESD protection circuit ensures that the device can withstand up to ±2kV HBM ESD events without any performance degradation or permanent device damage.The IXTP86N20T is also capable of withstanding an operating temperature range of -55°C to +175°C, making it an ideal choice for high temperature applications such as automotive, industrial, and aerospace.The IXTP86N20T is well suited for both surface-mount and connectorized applications. Its built-in lead frame makes it ideal for the use of connectors such as SMA, MMCX, etc.The device\'s main advantage is its low on-resistance combined with its high current density capability. It has a minimum RDS(on) value of 14mΩ and a maximum on-resistance of 25mΩ. The typical maximum drain current capability for the device is 15A at a drain to source voltage of 25V.The IXTP86N20T is based on a vertical N-channel MOSFET transistor structure. The main advantage it offers over traditional vertical and lateral MOSFETs is its low on-resistance and tight RDS(on) distribution. Its low on-resistance is due to its built-in vertical P+ polysilicon gate structure. The vertical gate eliminates the need for external gate wiring, which greatly reduces RDS(on) and makes the IXTP86N20T a better choice for high current applications. The working principle of the IXTP86N20T is identical to that of other MOSFETs. When the device is powered on, the drain-source region between the source and the drain is turned ON, which causes electrons to flow from the source to the drain making the device conductive. When the gate voltage drops below the threshold voltage of the device, the device turns OFF and current ceases to flow.In summary, the IXTP86N20T is a low on-resistance, high current density and high breakdown voltage MOSFET transistor from IXYS Corporation that is ideally suited for intensive power applications. It is an efficient device with low gate charge and tight RDS(on) distribution. Its built-in vertical P+ polysilicon gate structure helps reduce on-resistance and make it a better choice for high current applications. Its fast switching and on-chip ESD protection makes it an ideal choice for harsh industrial conditions.

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