Allicdata Part #: | IXTT500N04T2-ND |
Manufacturer Part#: |
IXTT500N04T2 |
Price: | $ 7.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 40V 500A TO-268 |
More Detail: | N-Channel 40V 500A (Tc) 1000W (Tc) Surface Mount T... |
DataSheet: | IXTT500N04T2 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 6.98059 |
Series: | TrenchT2™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 500A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 405nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 25000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1000W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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The IXTT500N04T2 is an insulated-gate, fast switching, non-polarized double N-channel MOSFET. It offers significant advancements in on-resistance, rDS(on) and switching performance over a wide range of applications.
As its name suggests, the IXTT500N04T2 is a single MOSFET device. It consists of two N-type field-effect transistors (N-FETs) integrated into a single package. The integrated dual N-FETs are fabricated using an advanced CMOS process, and are able to achieve both higher efficiency and improved gate capacitance. The N-FETs are ideal for applications where low power dissipation and reduced EMI are required, and can be used in portable electronics and many other applications.
The IXTT500N04T2 is designed for utilization in high-speed switching applications operating at high temperatures. It achieves a wide operating range featuring outstanding dynamic characteristics and a low on-resistance. It has excellent linearity and is capable of delivering a nearly linear output waveform.
In addition to its excellent dynamic properties, the IXTT500N04T2 also offers excellent on-resistance (rDS(on)), providing high power efficiency and lower heat dissipation. This makes it ideal for applications where heat dissipation is a prominent concern.
The IXTT500N04T2 also offers enhanced gate pin-out options, allowing for improved design flexibility and system performance. This allows the device to be used in applications that require high-side or low-side drive, as well as applications requiring dual or quad device operation.
The IXTT500N04T2 is an ideal choice for high-speed switching applications operating at high temperatures, as it features a high on-resistance, excellent dynamic characteristics, and enhanced gate pin-out options. Its low power dissipation and reduced EMI make it suitable for portable electronics, and its linearity enables it to deliver a nearly linear output waveform.
The specific data is subject to PDF, and the above content is for reference
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