| Allicdata Part #: | IXTT16N50D2-ND |
| Manufacturer Part#: |
IXTT16N50D2 |
| Price: | $ 7.68 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 16A TO-268 |
| More Detail: | N-Channel 500V 16A (Tc) 695W (Tc) Surface Mount TO... |
| DataSheet: |  IXTT16N50D2 Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 6.91154 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 695W (Tc) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 5250pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 199nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 240 mOhm @ 8A, 0V |
| Drive Voltage (Max Rds On, Min Rds On): | 0V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTT16N50D2 is a semi-custom, advanced insulated gate bipolar transistor (IGBT) technology device, offering excellent design flexibility and optimum performance for a variety of applications. This device belongs to the FET, MOSFET, and single device category and as such, offers superior switching characteristics and power dissipation capability. The IXTT16N50D2 is suitable for use in many power electronics applications, such as motor speed control, motor drive, switching power supplies, UPS systems, and high-voltage applications.
The IXTT16N50D2 is designed to utilize a wide variety of drive and control technologies. The device is designed to handle an operating range of 10 to 550V, making it suitable for a wide range of applications. The device has a low on-state resistance, superior switching speed and low losses, making it ideal for power applications. The device is designed to be rugged and reliable, offering reliable operation in harsh environments. The device has UL/CSA certifications, making it suitable for use in various environments.
The IXTT16N50D2 is constructed using an advanced IGBT technology that makes it suitable for use in a variety of applications. The device architecture is optimized for minimum losses, fast switching speeds, and easy parallel configuration. The device also employs active clamping circuitry, making it possible to operate at higher frequencies and offer better RDS(on) performance. The device also has an integrated temperature sense diode and several protection functions, including an undervoltage lockout (UVLO) for improved reliability and safe operation.
The IXTT16N50D2 has a gate turn-on voltage of 4.5V or higher, allowing it to be driven at higher voltages. The gate turn-on voltage and turn-band voltage are controlled with the built-in driver circuitry, allowing it to be operated at higher frequencies. The device also has a built-in current limit function that restricts the current in the device when placed in an over-current condition. The device also features internal clamping diodes that allow it to operate at higher frequencies while protecting the device from overvoltage transients. The IXTT16N50D2 also includes an integrated temperature sensor, which helps to protect it from over-temperature conditions.
In conclusion, the IXTT16N50D2 device is a semi-custom, advanced IGBT technology device, which offers superior power and switching characteristics for various applications. The device is suitable for use in many power electronics applications and has a wide operating range and high reliability. The device offers excellent design flexibility and optimum performance for a variety of applications and is UL/CSA certified.
The specific data is subject to PDF, and the above content is for reference
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