Allicdata Part #: | IXTT88N15-ND |
Manufacturer Part#: |
IXTT88N15 |
Price: | $ 7.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 150V 88A TO-268 |
More Detail: | N-Channel 150V 88A (Tc) 400W (Tc) Surface Mount TO... |
DataSheet: | IXTT88N15 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 6.97410 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 88A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 44A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 400W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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The IXTT88N15 is an opto-P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that is specifically designed to assist in the protection of telecom, datacom, and industrial equipment in voltage applications. This MOSFET device was designed with a unique internal configuration that combines a P-channel MOSFET and an in-built photocoupler that is used to control its conduction. The IXTT88N15 device is a single-package, N-channel MOSFET with a maximum drain-to-source voltage of 800V and a maximum gate-to-source voltage of 16V.
When it comes to the application field of IXTT88N15, it is important to note that this device is designed for telecom, data and industrial applications that require the protection of sensitive analogue and digital equipment from overvoltage events. The IXTT88N15 is also suitable for applications such as motor control, DC/DC converter, and general rectifiers. Due to its industry-leading performance and high level of protection, the IXTT88N15 is also well suited for use in telecommunication systems, as well as for applications that require opto-insulated voltage sensing.
In terms of the IXTT88N15’s working principle, the device acts as a solid-state air-gap protection solution that blocks and redirects harmful voltages while ensuring current continuity. When this device is employed in a standard application, the input signal controls the MOSFET’s gate via the connected photocoupler. As the input signal increases, the gate of the MOSFET is opened up further and allows current to flow through it. This current is then allowed to flow through the load and back to ground. However, if the input signal is over a certain threshold, not only will the IXTT88N15 open up its gate and prevent current from flowing through it, but it will also redirect the overvoltage current away from the load and to your specified protection device. Thus, it can act as both a protective element and a current-limiting device.
In conclusion, the IXTT88N15 is an advanced MOSFET device that is designed for use in a wide range of voltage protection applications. This device is equipped with a photocoupler that enables it to open and close its gate in order to control the flow of current and protect sensitive equipment from overvoltage events. Lastly, the IXTT88N15 can also act as a current-limiting device due to its unique internal configuration, which allows it to quickly and safely redirect hazardous voltages away from the protected system.
The specific data is subject to PDF, and the above content is for reference
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