IXTT10N100D2 Discrete Semiconductor Products |
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| Allicdata Part #: | IXTT10N100D2-ND |
| Manufacturer Part#: |
IXTT10N100D2 |
| Price: | $ 8.46 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1000V 10A TO-267 |
| More Detail: | N-Channel 1000V 10A (Tc) 695W (Tc) Surface Mount T... |
| DataSheet: |  IXTT10N100D2 Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 7.61313 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 695W (Tc) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 5320pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTT10N100D2 is an N-channel Enhancement Mode MOSFET Transistor that is designed to handle currents up to 40A and powers up to 100V. This versatile transistor can be used in many different applications, including motor control, audio amplifier, switching regulators, and digital logic. The IXTT10N100D2 has many features that make it an ideal choice for these applications.
The IXTT10N100D2 is classified as an N-channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a popular type of transistor used for many purposes, and has many advantages. It is well suited for control applications as it has low on-state resistance and high switching speed. It also features a low gate threshold voltage, making it suitable for low voltage applications. Furthermore, it offers strong immunity to induce noise, making it ideal for switching applications.
The working principle of an N-channel Enhancement Mode MOSFET is fairly simple. When a positive voltage is applied to the Gate, the Transistor will turn ‘on’ and current will flow from the Source to the Drain. When a negative voltage is applied to the Gate, the Transistor will turn ‘off’ and current will not flow. The greater the voltage that is applied to the Gate, the higher the current flow will be. This type of Transistor is ideal for controlling a large amount of power without needing too much current to do so.
The IXTT10N100D2 is well suited for many applications, such as motor control, audio amplifier, and digital logic. It is ideal for motor control because its low on-state resistance and high switching speed allows it to respond quickly to changing demands. It is also well suited for audio amplifier applications due to its strong immunity to induced noise. In addition, due to its low gate threshold voltage, the IXTT10N100D2 is great for digital logic, as it is able to turn on quickly at low voltage levels.
In conclusion, the IXTT10N100D2 N-Channel Enhancement Mode MOSFET Transistor is a versatile device that can be used in many different applications. Its low on-state resistance and high switching speed is ideal for motor control, while its strong immunity to induced noise makes it perfect for audio amplifier applications. Additionally, its low gate threshold voltage makes it an excellent choice for digital logic systems.
The specific data is subject to PDF, and the above content is for reference
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