Allicdata Part #: | IXTT50P10-ND |
Manufacturer Part#: |
IXTT50P10 |
Price: | $ 5.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 100V 50A TO-268 |
More Detail: | P-Channel 100V 50A (Tc) 300W (Tc) Surface Mount TO... |
DataSheet: | IXTT50P10 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 5.13891 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4350pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTT50P10, also known as the Power MOSFET, is a superior transistor designed for efficient energy transfer. The IXTT50P10 is a part within the family of discrete Power MOSFETs and is a single N-Channel device. Being very robust, it is an optimal device for design flexibility. It can serve as an electronic switch in a broad range of high frequency and high voltage applications, facilitating the transfer of power in a power efficient manner.
Because of its robust design and desirable feature set, the IXTT50P10 is a favored device to use in motor control, where it is used to drive the motor to its desired speed. It is also used in the direct conversion applications, where it can reduce switching losses. It is an ideal choice in high frequency power conversion applications, as it can help facilitate a low thermal resistance while still offering low on-resistance.
The main features which make the IXTT50P10 particularly beneficial for application in electrical circuitry include:
- Extremely low on-resistance for improved efficiency
- Tight on-resistance tolerance for higher accuracy
- High current capability for increased power handling
- Improved gate drive voltage for faster switching speeds
- Industry leading off-state leakage characteristics
The IXTT50P10 is available in an 8-lead PDIP or 8-lead TO-220 package, as well as an 8-lead SOIC package.
The basic working principle of the IXTT50P10 is that it converts a low voltage and low current signal into a high voltage and high current signal. When the gate voltage increases a current is induced across the device and it will become conducting. The magnitude of the current is dependent on the amount of gate voltage applied. When the current passes through the device it induces a voltage drop across the drain affectively boosting the input voltage, enabling it to be applied to a load.
Because it operates as a switching device, it provides an energy efficient way to control the flow of power. When the gate voltage is below the threshold voltage, the device is off and the transistor is closed - no current is allowed to pass through it. When the gate voltage exceeds the threshold, the device is on and allowing current pass through it. This reduces the amount of energy needed to perform the same functions as an amplifier.
In summary, the IXTT50P10 is a superior single N-Channel transistor used for high frequency and high voltage applications. Because of its robust design and desirable feature set, the IXTT50P10 is well suited for motor control, direct conversion applications and high frequency power conversion. It is tailored to be an electronic switch, providing an energy efficient way to control the flow of power. With its extreme low on-resistance, high current capability, and improved gate drive voltage, the IXTT50P10 is a superior selection for all electronics projects.
The specific data is subject to PDF, and the above content is for reference
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