| Allicdata Part #: | IXTT6N120-ND |
| Manufacturer Part#: |
IXTT6N120 |
| Price: | $ 6.65 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 1200V 6A TO-268 |
| More Detail: | N-Channel 1200V 6A (Tc) 300W (Tc) Surface Mount TO... |
| DataSheet: |  IXTT6N120 Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 5.98542 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1950pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 2.6 Ohm @ 3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 1200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTT6N120 is a 6A, 120V, N-Channel MOSFET transistor with advanced power MOSFET technology. This type of transistor is part of the family of Single PowerMOS FETs. It is designed for use in power circuits, particularly where switching and high power efficiency are desired. It has a wide operating voltage range of 10 to 100V, and the maximum frequency of its switching operation is 1MHz. It also has a low gate-source threshold voltage, so that it can be switched on at low voltages. The IXTT6N120 is also resistant to electrostatic discharge, has a low on-resistance, and can handle a large amount of power due to its high current handling capability.
The application fields of the IXTT6N120 are mainly related to its high power efficiency and switching FET technology. It is ideal for use in power converters, power amplifiers, switcher circuits, and inverters. It is also suitable for buck converters, Li-Ion batteries, Class D Audio amplifiers, and flyback converters. In terms of industrial applications, the IXTT6N120 is widely used in motor drives and power supplies, motor control, and process control applications.
The working principle of the IXTT6N120 is based on the desired application. In a general sense, the MOSFET works by controlling the flow of electrons through its gate. When the gate-source voltage is applied, it will either turn on or turn off the current through the channel region. The amount of current flowing through the device is determined by the amount of voltage applied to its gate. This is how the device controls the flow of power to different components in the circuit.
The IXTT6N120 is a great choice for those who need a versatile and high-efficiency power device. With its wide operating voltage range, low on-resistance, high current handling capability, and excellent switching performance, the IXTT6N120 is suitable for a variety of power-related applications. The device is also resistant to electrostatic discharge and has a relatively low gate-source threshold voltage, making it ideal for use in circuits operating at low voltages.
The specific data is subject to PDF, and the above content is for reference
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