| Allicdata Part #: | IXTT96N20P-ND |
| Manufacturer Part#: |
IXTT96N20P |
| Price: | $ 4.89 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 96A TO-268 |
| More Detail: | N-Channel 200V 96A (Tc) 600W (Tc) Surface Mount TO... |
| DataSheet: |  IXTT96N20P Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 4.39635 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 600W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4800pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 145nC @ 10V |
| Series: | PolarHT™ |
| Rds On (Max) @ Id, Vgs: | 24 mOhm @ 500mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 96A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTT96N20P is a high speed power MOSFET that can be utilized in a variety of applications. It is a three-terminal device that is designed to ensure a high current conducting capacity, and is capable of operating at up to 20 Amps. The IXTT96N20P is a perfect choice for use in high voltage applications, such as power semiconductor applications, high current switches, inverters, and drivers.
The IXTT96N20P is a power MOSFET, also known as a Metal Oxide Semiconductor FET (MOSFET). This is a type of transistor that utilizes a drain-source channel within an insulated-gate electrode to control current flow. MOSFET devices are widely used due to their low power losses and ease of use. The IXTT96N20P is a single device, meaning that it has one drain-source channel and one insulated-gate electrode.
The working principle of the IXTT96N20P is relatively simple and involves the use of gate voltage to control the flow of current. When the gate voltage is applied, the device will conduct current, and when the voltage is removed, the device will stop conducting current. The device also utilizes a body terminal, which is known as the source, that helps to control the voltage across the drain-source channel. The source terminal can be used to provide excellent power control and performance.
The IXTT96N20P is an ideal device for use in a variety of applications. It is especially well-suited for automotive and industrial applications that require high power control and performance. The device is also able to withstand high temperature and vibration environments. It is also capable of providing high frequency switching and is able to operate at high speeds. In addition, the device has a low on-state resistance and can be used in a wide range of switching applications.
The IXTT96N20P is a versatile device that can be used in a variety of different applications. It is a perfect choice for use in power semiconductor applications, high current switches, inverters, and drivers. The device is also well-suited for automotive and industrial applications that require high power control and performance. It can provide excellent switching capabilities and can operate at high speeds. The IXTT96N20P is an ideal device for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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