IXTT11P50 Allicdata Electronics
Allicdata Part #:

IXTT11P50-ND

Manufacturer Part#:

IXTT11P50

Price: $ 6.22
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET P-CH 500V 11A TO-268
More Detail: P-Channel 500V 11A (Tc) 300W (Tc) Surface Mount TO...
DataSheet: IXTT11P50 datasheetIXTT11P50 Datasheet/PDF
Quantity: 1000
30 +: $ 5.59923
Stock 1000Can Ship Immediately
$ 6.22
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXTT11P50 is a P-channel enhancement mode MOSFET. It is mainly used as a digital switch and other low-frequency switching applications such as signal gating,charging and discharging of a capacitor, current limiting, light emitting diode and logic interface circuits. The IXTT11P50 is traditionally used with analog switches and relays to provide digital control.

The working principle of the IXTT11P50 is similar to other P-channel enhancement mode MOSFETs. It is constructed with a n-channel MOSFET and a p-channel MOSFET sharing a common source terminal. The N-channel MOSFET is connected to a positive voltage supply while the P-channel MOSFET is connected to the ground. The Gate terminal of the MOSFET is connected to a control signal which completes the circuit.

When the voltage is applied to the Gate terminal, a charge carriers, mostly electrons, will be attracted away from the N-channel MOSFET to the P-channel MOSFET. This accumulation of charge carriers will create an electrostatic field, which causes an inversion of the underlying semiconductor material, resulting in an inversion of the Gate-to-Source voltage. This inversion causes the current to flow from the source to the drain, thus allowing the conduction of electricity.

When the voltage applied to the Gate terminal is zero, the electrostatic field is also reduced to zero, and the Gate-to-Source voltage remains positive, causing the current to stop flowing from source to drain. The IXTT11P50 turns off without the need for an additional voltage. This makes it very easy to control, and is the reason why it is mainly used in digital switching applications.

The IXTT11P50 is well suited for high-current loads since it has a lower RDS On resistance than other MOSFETs. The maximum achievable load current is limited by the Gate-to-Source and Gate-to-Drain voltages, but these limits are usually not an issue in most applications. The IXTT11P50 also has fast switching speeds, making it suitable for high-frequency applications.

In conclusion, the IXTT11P50 is a P-channel enhancement mode MOSFET which can be used for low-frequency digital switching applications. It has low resistance and fast switching speed, which make it well-suited for high-current loads and high-frequency applications. This makes the IXTT11P50 a great choice for applications that require the highest level of performance.

The specific data is subject to PDF, and the above content is for reference

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