Allicdata Part #: | IXTT110N10P-ND |
Manufacturer Part#: |
IXTT110N10P |
Price: | $ 4.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 110A TO-268 |
More Detail: | N-Channel 100V 110A (Tc) 480W (Tc) Surface Mount T... |
DataSheet: | IXTT110N10P Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 3.83082 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 480W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3550pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | PolarHT™ |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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Integrated gates of total 10 transistors including 8 N and 2 P types of FETs (MOSFET) is a so-called IXTT110N10P. It is a type of high-reliability, high-power device and specially designed for using in telecommunications and other industrial equipment. Herein, this part will review about the application field and working principle for IXTT110N10P.
First, the application field mainly covers the operational and power line circuit where require a high-performance tool. Such as communication systems and TV compression chips, high-frequency amplifiers and coupling devices, power controlling circuits, etc. Furthermore, the IXTT110N10P is also good for applications requiring switching rapidly, such as inverter motor drive, since it exhibits the characteristics of non-saturating switching devices, which means that they can handle large ac currents and large surges.
Next, based on above demand, IXTT110N10P is a perfect device choice. How it works? In general, N-type MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) which is biased by a positive gate voltage. Referring to IXTT110N10P, each combination of 10 P-type and N-type MOSFET are isolated to ensure superior voltage and current blocking properties. Furthermore, the N-type MOSFET gain the “accurate pin compatible connectivity”, its channel width can be accurately compared to the depletion-mode operation area. The benefit is that the channel width can be as large as opto-mechanical switches can provide, allowing for more efficient power operations.
Finally, because the IXTT110N10P is all-in-one solution of 8 N-type and 2 P-type MOSFETs, it can performs better performance than the transistor for controlling power and switch. Additionally, it is beneficial for communication systems and TV compression chips, which means it could enhance the Q/A (quality and performance) of the control power circuit.
In conclusion, IXTT110N10P is an integrated gate device comprising 8 N and 2 P types of FETs. Its application field mainly focusing on operational and power line circuit, while its characteristics of non-saturating and “accurate pin compatible connectivity” makes it an ideal choice for switch rapidly and control circuit. Also, it owns a 6A proposed and 4A max current moreover 10V-17V proposed, 20V max voltage. All of these features so that IXTT110N10P can fit for various applications with superior voltage and current blocking properties.
The specific data is subject to PDF, and the above content is for reference
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