Allicdata Part #: | NVMFS5C404NLWFAFT3G-ND |
Manufacturer Part#: |
NVMFS5C404NLWFAFT3G |
Price: | $ 1.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 370A 5DFN |
More Detail: | N-Channel 40V 370A (Tc) 200W (Tc) Surface Mount 5-... |
DataSheet: | NVMFS5C404NLWFAFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 1.27345 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 370A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 0.67 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 12168pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN, 5 Leads |
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The NVMFS5C404NLWFAFT3G is one of the most popular Field Effect Transistors (FETs) on the market, and it is a great solution for many applications. It is a single metal-oxide-semiconductor field effect transistor, and it has many uses in electronic devices. This article will discuss the application field and working principle of the NVMFS5C404NLWFAFT3G.
The NVMFS5C404NLWFAFT3G is mainly used in pre-driver circuits, gate drive circuits, power control and switching circuits, and analog circuits. It is also used in a wide range of industrial, automotive, and consumer electronics. The NVMFS5C404NLWFAFT3G has a relatively high current capacity, making it an excellent choice for applications that require high current levels. It also has an easily adjustable gate threshold voltage, which makes it an ideal device for controlling and switching large currents.
The NVMFS5C404NLWFAFT3G operates by controlling drain-source current through an insulated gate. An external voltage, or gate voltage, is applied to the insulated gate, which modulates the effective channel resistance between the source and the drain of the FET. This modulated channel resistance can be adjusted by varying the external gate voltage. When the gate voltage is high, the channel resistance is low and a large current can flow between the source and the drain. On the other hand, when the gate voltage is low, the channel resistance is high and the drain-source current is limited.
The NVMFS5C404NLWFAFT3G also has a built-in protection circuit that prevents excessive current from flowing through the device. This protection circuit monitors the gate voltage and the drain-source current, and adjusted the gate voltage to limit the current. This built-in protection can be adjusted to suit a particular application, and it provides a safe and reliable usage for any application.
The NVMFS5C404NLWFAFT3G is a high quality FET that offers a wide range of features and advantages. It is ideal for many applications, including pre-driver circuits, gate drive circuits, power control and switching circuits, and analog circuits. It has a relatively high current capacity, making it an excellent choice for applications that require high current levels. It also has an easily adjustable gate threshold voltage, and a built-in protection circuit that prevents excessive current from flowing through the device.
The specific data is subject to PDF, and the above content is for reference
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