| Allicdata Part #: | NVMFS5C426NLWFT1G-ND |
| Manufacturer Part#: |
NVMFS5C426NLWFT1G |
| Price: | $ 0.62 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | 40V 1.2 MOHM T6 S08FL SIN |
| More Detail: | N-Channel 40V 41A (Ta), 237A (Tc) 3.8W (Ta), 128W ... |
| DataSheet: |  NVMFS5C426NLWFT1G Datasheet/PDF |
| Quantity: | 1000 |
| 1500 +: | $ 0.55709 |
Specifications
| Gate Charge (Qg) (Max) @ Vgs: | 93nC @ 10V |
| Package / Case: | 8-PowerTDFN, 5 Leads |
| Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 128W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5600pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | Automotive, AEC-Q101 |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 1.2 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 41A (Ta), 237A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
Description
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NVMFS5C426NLWFT1G is an N-channel vertical double diffused power MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). This power MOSFET is designed with a high current capacity. It can operate over a wide gate voltage range with low input capacitance. The NVMFS5C426NLWFT1G is ideally suited for applications such as audio amplifiers, power supplies, motor drivers and automotive applications.MOSFET stands for Metal-Oxide Semiconductor Field Effect Transistor and is a type of field-effect transistor (FET) that uses two insulated gates to control the flow of current. A MOSFET acts as a switch, by either allowing or prohibiting the flow of current depending on the voltage applied to the gate. This makes them ideal for power switching devices, especially when used in high current applications.The NVMFS5C426NLWFT1G is a vertical MOSFET with four pins. Two pins are for the source (S) and drain (D) of the device, while the other two pins are for the gate (G) and the Gnd (ground). When the gate voltage is increased, the NVMFS5C426NLWFT1G will switch on and pass current between the source and the drain. Conversely, when the gate voltage is lowered, the device will be switched off and will not pass current.The NVMFS5C426NLWFT1G offers an on-resistance (RDS-ON) of 0.148 Ohms and a maximum drain-source voltage (VDS) of 40V. It is designed with a high voltage breakdown and a low input capacitance, making it ideal for audio amplifiers and motor drivers. This device can handle a continuous drain current of 26A and can handle peak surge drain currents of up to 45A, making it a good choice for powering medium to high power applications.The NVMFS5C426NLWFT1G is typically used in applications where large currents needs to be switched on and off quickly, such as motor drivers and power supplies. This power MOSFET can handle high peak currents, making it suitable for powering large inductive loads such as motors. It is also a good choice for audio amplifiers, where linearity and low distortion are essential.In summary, the NVMFS5C426NLWFT1G is a vertical double diffused N-channel MOSFET that is suitable for applications such as audio amplifiers, power supplies, motor drivers and automotive applications. It is designed with a low on-resistance, high voltage breakdown and low input capacitance, making it capable of passing high currents and offering a good linearity and low distortion.The specific data is subject to PDF, and the above content is for reference
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