Allicdata Part #: | NVMFS5C430NLWFAFT1G-ND |
Manufacturer Part#: |
NVMFS5C430NLWFAFT1G |
Price: | $ 0.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 38A 200A 5DFN |
More Detail: | N-Channel 40V 38A (Ta), 200A (Tc) 3.8W (Ta), 110W ... |
DataSheet: | NVMFS5C430NLWFAFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.44665 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 1.4 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Ta), 200A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NVMFS5C430NLWFAFT1G is a single N-Channel, high performance, low-power consumption, small-size and long lifetime MOSFET (Metal–Oxide–SemiconductorField-EffectTransistor)Transistor. It has excellent features such as high breakdown voltage, excellent wide input voltage range, low internal resistance, high thermal conductivity and good electro-static discharge capabilities. It is ideal for applications such as power supply, motor control, lighting, amplifier and DC/DC converter.
An N-channel MOSFET is a type of FET (Field Effect Transistors) which are capable of switching high voltages and large currents. The NVMFS5C430NLWFAFT1G MOSFET is a three-terminal device which consists of the source (S), drain (D) and gate (G) terminals. The introduction of a voltage on the gate terminal results in a change in the electrical characteristics of the MOSFET.
The NVMFS5C430NLWFAFT1G is a N-type (N-channel) MOSFET meaning that it has a positive voltage (Vin) applied to the source and a negative voltage (Vgs) applied to the gate. When a negative voltage is applied to the gate of an N-type MOSFET, it forms a conductive path between the source and drain allowing for current to flow in the direction from source to drain. Conversely, when the voltage on the gate is positive, the MOSFET is ‘OFF’ and no current is allowed to flow.
The NVMFS5C430NLWFAFT1G has a typical breakdown voltage of 40V and maximum drain current of 4.3A. Additionally, its thermal resistance (RDS(on)) is low, meaning that it is capable of dissipating a large amount of power without creating too much heat. This also allows for the MOSFET to be used in high power applications where minimal heat is desired.
In terms of applications, the NVMFS5C430NLWFAFT1G can be used for a variety of purposes. For instance, it can be utilized in switching power supplies and DC/DC converters, motor control, motor speed control, motor drive, robotics, and other high power applications. Additionally, it can be employed in low-power applications such as LEDs, mobile and audio applications, and amplifier circuits. The MOSFET can also be used as a switch in applications such as doorbells and thermostats.
Due to its small size, low power consumption, high breakdown voltage, high thermal conductivity, good electro-static discharge capabilities, and low drain-source resistance, the NVMFS5C430NLWFAFT1G offers optimum performance even in high power applications. In addition, its long lifetime and robustness make it a preferred choice for many engineers for their desired applications.
The specific data is subject to PDF, and the above content is for reference
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