NVMFS5C430NWFAFT3G Allicdata Electronics
Allicdata Part #:

NVMFS5C430NWFAFT3G-ND

Manufacturer Part#:

NVMFS5C430NWFAFT3G

Price: $ 0.44
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 35A 185A 5DFN
More Detail: N-Channel 40V 35A (Ta), 185A (Tc) 3.8W (Ta), 106W ...
DataSheet: NVMFS5C430NWFAFT3G datasheetNVMFS5C430NWFAFT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.40210
Stock 1000Can Ship Immediately
$ 0.44
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NVMFS5C430NWFAFT3G is a Silicon N-channel enhancement mode power field effect transistor (FET) with an extremely fast switching time and a low threshold voltage. It has excellent thermal stability, high maximum drain-source voltage, and a wide range of available currents. It is manufactured using advanced silicon technology which makes it ideal for high power applications that require fast switching and low threshold voltages. The NVMFS5C430NWFAFT3G is commonly used in portable electronics, motor control applications, and medical equipment.

The working principle of the NVMFS5C430NWFAFT3G is based on its two important features, the gate and the source. All FETs have a gate that controls the voltage applied to the drain. When the gate is given a positive voltage, it creates an electric field which allows electrons to flow from the source to the drain. This creates a current flowing from the drain to the source. The FET is then turned on, and the current is regulated by the amount of voltage applied to the gate. When the gate is given a negative voltage, it creates an electric field which resists the flow of electrons, thus turning off the FET.

The NVMFS5C430NWFAFT3G has a high maximum drain-source voltage of 110 volts and a low threshold voltage of 1.2 volts. It is designed to handle peak currents of up to 10 amperes with a power rating of 30W. Its fast switching time of 1.0 μs makes it ideal for applications that require very fast switching times. It is also available in various package sizes to accommodate a variety of System-On-Chip (SoC) requirements.

The NVMFS5C430NWFAFT3G is used in a variety of applications, including portable electronics, motor control applications, and medical equipment. In portable electronics, the transistor can be used to control power in mobile phones, digital cameras, and other portable devices. In motor control applications, it can be used as a PWM (pulse-width modulation) controller in DC-Brushless motors and DC-motors. In medical equipment, it can be used as a power switch for surgical and heart monitoring systems.

In summary, the NVMFS5C430NWFAFT3G is an enhancement mode power field effect transistor that is ideal for high power applications that require fast switching and low threshold voltages. It is available in various package sizes and features a wide range of available currents, a high maximum drain-source voltage, and a fast switching time. It is also suitable for use in portable electronics, motor control applications, and medical equipment.

The specific data is subject to PDF, and the above content is for reference

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