Allicdata Part #: | NVMFS5C430NWFAFT3G-ND |
Manufacturer Part#: |
NVMFS5C430NWFAFT3G |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 35A 185A 5DFN |
More Detail: | N-Channel 40V 35A (Ta), 185A (Tc) 3.8W (Ta), 106W ... |
DataSheet: | NVMFS5C430NWFAFT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.40210 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 106W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Ta), 185A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NVMFS5C430NWFAFT3G is a Silicon N-channel enhancement mode power field effect transistor (FET) with an extremely fast switching time and a low threshold voltage. It has excellent thermal stability, high maximum drain-source voltage, and a wide range of available currents. It is manufactured using advanced silicon technology which makes it ideal for high power applications that require fast switching and low threshold voltages. The NVMFS5C430NWFAFT3G is commonly used in portable electronics, motor control applications, and medical equipment.
The working principle of the NVMFS5C430NWFAFT3G is based on its two important features, the gate and the source. All FETs have a gate that controls the voltage applied to the drain. When the gate is given a positive voltage, it creates an electric field which allows electrons to flow from the source to the drain. This creates a current flowing from the drain to the source. The FET is then turned on, and the current is regulated by the amount of voltage applied to the gate. When the gate is given a negative voltage, it creates an electric field which resists the flow of electrons, thus turning off the FET.
The NVMFS5C430NWFAFT3G has a high maximum drain-source voltage of 110 volts and a low threshold voltage of 1.2 volts. It is designed to handle peak currents of up to 10 amperes with a power rating of 30W. Its fast switching time of 1.0 μs makes it ideal for applications that require very fast switching times. It is also available in various package sizes to accommodate a variety of System-On-Chip (SoC) requirements.
The NVMFS5C430NWFAFT3G is used in a variety of applications, including portable electronics, motor control applications, and medical equipment. In portable electronics, the transistor can be used to control power in mobile phones, digital cameras, and other portable devices. In motor control applications, it can be used as a PWM (pulse-width modulation) controller in DC-Brushless motors and DC-motors. In medical equipment, it can be used as a power switch for surgical and heart monitoring systems.
In summary, the NVMFS5C430NWFAFT3G is an enhancement mode power field effect transistor that is ideal for high power applications that require fast switching and low threshold voltages. It is available in various package sizes and features a wide range of available currents, a high maximum drain-source voltage, and a fast switching time. It is also suitable for use in portable electronics, motor control applications, and medical equipment.
The specific data is subject to PDF, and the above content is for reference
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