NVMFS5C450NLWFAFT3G

Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 68W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2100pF @ 20V
Vgs (Max):	±20V
Series:	Automotive, AEC-Q101
Vgs(th) (Max) @ Id:	2V @ 250µA
Rds On (Max) @ Id, Vgs:	2.8 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	27A (Ta), 110A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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The NVMFS5C450NLWFAFT3G is an advanced insulated gate type bipolar transistor that is widely used in the industrial and commercial sector. It is widely used in applications such as power switches, motor drives, switching regulators, and radio channels. This device has unique advantages compared to traditional field effect transistors, such as increased performance, lower power dissipation, larger input capacitance, and smaller size. The NVMFS5C450NLWFAFT3G is a robust and reliable device that has been designed for use in various industries.The NVMFS5C450NLWFAFT3G is an advanced device that blends traditional insulated gate bipolar transistor (IGBT) technology with a field effect transistor (FET) technology. The device is fabricated with a mesa structure and has an integrated field-effect transistor construct to enhance overall performance and reliability. The FET structure is a three-terminal device with a common gate and two source and drain terminals. The device is constructed using N-type and P-type regions and operates in either enhancement or depletion mode.The operation of the NVMFS5C450NLWFAFT3G is based on a principle known as the voltage across the source and drain terminals. When a voltage is applied across the source and drain terminals, it creates an electric field between them. This electric field causes electrons and holes to become attracted to one another, resulting in a flow of current.The NVMFS5C450NLWFAFT3G can be used to control large currents and voltages. In addition, it can be used for high frequency and high temperature applications. It is a cost effective solution for applications requiring enhanced switching performance.The NVMFS5C450NLWFAFT3G can be used in a variety of applications. It is a popular choice for high power switching applications and as an adjustable current regulator. This device can also be used in high frequency applications, such as radio channels and switching regulators.The NVMFS5C450NLWFAFT3G is a reliable and stable device that offers excellent thermal and electrical robustness. It has excellent current-carrying capability, high switching speeds, and low on-state voltage drops. Due to its unique structure and advanced technology, this device offers long working life and excellent performance in a wide range of applications.The NVMFS5C450NLWFAFT3G also offers excellent noise immunity. This device is designed to reduce noise levels and improve signal-to-noise ratio. In addition, it provides protection against overvoltage and gate voltage surges. It is also able to tolerate high temperatures, allowing for the device to be used in high temperature industrial applications.The NVMFS5C450NLWFAFT3G is an innovative device with excellent performance and reliability. It is an ideal choice for high power switching applications and as an adjustable current regulator. It is also suitable for a variety of other applications where enhanced switching performance and low on-state voltage drops are desired. Its unique structure, advanced technology, and long working life make it an excellent choice for many industrial and commercial applications.

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