Allicdata Part #: | NVMFS5C456NLAFT1G-ND |
Manufacturer Part#: |
NVMFS5C456NLAFT1G |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V DFN5 |
More Detail: | N-Channel 40V 87A (Tc) 55W (Tc) Surface Mount 5-DF... |
DataSheet: | NVMFS5C456NLAFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.25082 |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 87A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The NVMFS5C456NLAFT1G is a n-channel enhancement mode field-effect transistor (n-FET) used to amplify or switch electronic signals. It is made of a silicon wafer and has electrical properties that allow it to be easily programmed, making it well-suited for use in digital logic systems. The NVMFS5C456NLAFT1G is widely used in industrial, commercial, and consumer electronics for its low-power capabilities, small size, and high switching speed.
Applications
The NVMFS5C456NLAFT1G can be used in a variety of applications, due to its small size and low-power capabilities. Some of the most commonly encountered uses include:
- Power control systems
- Switching regulators
- Analog-to-digital converters (ADCs)
- High speed logic circuits
- High voltage/high power switches
In addition to these common applications, the NVMFS5C456NLAFT1G can also be used for pulse-width modulation (PWM), phase-shift keying (PSK), and frequency-shift keying (FSK).
Working Principle
The NVMFS5C456NLAFT1G works on the principle of semiconductor-enhanced transistor operation. The device consists of a source and a drain. The source is where current enters the transistor and the drain is where current exits the device. The gate provides a pathway for electrons to travel between the source and drain, allowing the current to be regulated. As voltage is applied to the gate, it attracts the electrons, allowing the flow of current, and thus providing amplification of the input signal.
When the NVMFS5C456NLAFT1G is used as a switch, the device can be used in a variety of switching applications, including power supply and power control, audio and video equipment, and other low-voltage circuits. By passing a current through the gate, the transistor is actuated and the switch is opened or closed. The transistor can also be switched off to conserve energy when not in use.
The NVMFS5C456NLAFT1G is a versatile device for many applications due to its low power consumption and high speed capabilities. Its flexibility allows it to be used in a wide range of applications and its robust construction ensures that it is reliable and lasts for a long time.
The specific data is subject to PDF, and the above content is for reference
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