NVMFS5C460NLWFAFT1G Discrete Semiconductor Products |
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Allicdata Part #: | NVMFS5C460NLWFAFT1GOSTR-ND |
Manufacturer Part#: |
NVMFS5C460NLWFAFT1G |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 21A 78A 5DFN |
More Detail: | N-Channel 40V 21A (Ta), 78A (Tc) 3.6W (Ta), 50W (T... |
DataSheet: | NVMFS5C460NLWFAFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.26546 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 78A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NVMFS5C460NLWFAFT1G is an advanced semiconductor device known as a Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). A MOSFET is a type of field-effect transistor (FET) that uses two thin layers of metal oxide, or MOS, to control an electrical current. It is important to understand the type of transistor and how it works in order to properly utilize its many applications.
A MOSFET is an electronic device that is used to regulate the flow of electricity. Its primary purpose is to control either voltage or current in a circuit, allowing the transfer of current from one power source to another without the need for a separate transistor to regulate the current. The NVMFS5C460NLWFAFT1G is a single-channel MOSFET, meaning it has a single gate that is used to protect an electrical circuit from overload and protect certain parts of the circuit from damage due to excessive current.
The NVMFS5C460NLWFAFT1G has a wide range of applications. It can be used to amplify signals from a microcontroller, to detect short circuits, to control motor speed, and even to regulate electrical current in a circuit. The device can be used in electronic circuits that require high-speed switching and is capable of operating at high frequencies, making it an ideal choice for complex applications.
The working principle of the NVMFS5C460NLWFAFT1G is based on the fact that when a metal oxide layer is placed between two conducting layers, a charge can be applied to the metal oxide layer to create a strong electric field. This field can be used to control the flow of current in the circuit. The charge applied to the metal oxide layer is controlled by the application of a voltage at the gate of the MOSFET. As the voltage is increased or decreased, the charge on the metal oxide layer is also changed and the flow of current is adjusted accordingly.
The most important aspect of the NVMFS5C460NLWFAFT1G is its ability to switch quickly, allowing it to regulate current in a circuit quickly and efficiently. This makes it ideal for applications that require high-speed switching, such as voltage converters, motor-control devices, and frequency control amplifiers. It is also used for applications that require high-frequency operation, such as wireless communication systems.
The NVMFS5C460NLWFAFT1G is a versatile device with a wide range of applications. It is important to understand the working principle and the many applications of the device to ensure it is used correctly. Knowing the specifications and features of the device can help to make sure that it is used for its intended purpose and that its performance is maximized.
The specific data is subject to PDF, and the above content is for reference
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