Allicdata Part #: | NVMFS5C466NLT1G-ND |
Manufacturer Part#: |
NVMFS5C466NLT1G |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | 40V 7 MOHM T8 S08FL SINGL |
More Detail: | N-Channel 40V 16A (Ta), 52A (Tc) 3.5W (Ta), 37W (T... |
DataSheet: | NVMFS5C466NLT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.18976 |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 25V |
Vgs (Max): | ±20V |
Series: | Automotive, AEC-Q101 |
Vgs(th) (Max) @ Id: | 2.2V @ 30µA |
Rds On (Max) @ Id, Vgs: | 7.3 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 52A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The NVMFS5C466NLT1G is a logic MOSFET transistor, specifically designed to be used in a wide range of applications and operating conditions. It is a single channel, low voltage FET transistor. The NVMFS5C466NLT1G is designed to offer excellent performance and extremely low power consumption, which makes it ideal for use in a wide variety of applications.
In terms of its application field, the NVMFS5C466NLT1G is particularly advantageous in motor control and load switching (such as in column control systems like those found in robots and vehicles), as well as in logic gate circuitry. In each application it can provide high speed switching, high moderate output power and very low power consumption, making it an ideal choice for demanding applications. In addition, the MOSFET is suitable for power, audio, visual and digital control circuits.
The working principle of the NVMFS5C466NLT1G is based on the fact that it is a single-channel FET transistor. This means that it consists of two transistors in a single package, one at the source and one at the drain. The source and the gate of the transistor are connected, allowing for an electric current to flow in either direction between the source and the drain. The current is controlled by the applied voltage to the gate; when no voltage is applied, the transistor acts as an open switch and no current flows. When a voltage is applied, the transistor acts as a closed switch and current flows.
The NVMFS5C466NLT1G is capable of providing optimised performance with a very low allowed gate-drain voltage and capacitance. Its maximum breakdown voltage is 15V, which reduces the risk of current and voltage overload in short-circuit conditions. The transistor also boasts a wide range of operating conditions and voltage options, with maximum drain-source voltage of up to 60V, gate voltage up to ±20V and gate-source voltage of up to ±25V. Moreover, the NVMFS5C466NLT1G has a very low input capacitance, meaning it can provide optimised response times when undergoing switching operations, while its high on-state resistance allows it to maintain a low average power consumption in most cases.
Overall, the NVMFS5C466NLT1G is an excellent choice for a wide variety of applications and operating conditions. Its single channel MOSFET design provides high power, switching speed and low voltage and power consumption, while its comprehensive range of operating conditions make it highly suitable for use in the most demanding applications. With its excellent performance, low cost and small size, the NVMFS5C466NLT1G is an excellent choice for a variety of transistors.
The specific data is subject to PDF, and the above content is for reference
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