NVMFS5C468NLWFAFT3G Allicdata Electronics
Allicdata Part #:

NVMFS5C468NLWFAFT3G-ND

Manufacturer Part#:

NVMFS5C468NLWFAFT3G

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 40V 37A SO8FL
More Detail: N-Channel 40V 13A (Ta), 37A (Tc) 3.5W (Ta), 28W (T...
DataSheet: NVMFS5C468NLWFAFT3G datasheetNVMFS5C468NLWFAFT3G Datasheet/PDF
Quantity: 1000
5000 +: $ 0.15679
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
Vgs (Max): ±20V
Series: Automotive, AEC-Q101
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 10.3 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 37A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Modern electronics are heavily reliant on transistors, and AFT3G is no exception. NVMFS5C468NLWFAFT3G is a MOSFET Transistor, also known as Metall-Oxide-Silicon Field-Effect Transistor, which are particularly useful due to their low on-stateresistance, high input impedance, and high switching speed.

The NVMFS5C468NLWFAFT3G is a single-gate MOSFET transistor, consisting of a gate, drain, and source. The gate of the NVMFS5C468NLWFAFT3G is the main control point, and its function is to create an electrical field between the gate and the source. The field modulates the amount of current allowed to flow between the drain and the source, allowing for the control of the current. When the gate is positively charged, the current flow is kept to a minimum, whereas when the gate is negatively charged, the current flow is maximized.

The NVMFS5C468NLWFAFT3G is well suited for a variety of applications, thanks to its low RDS(on) and its wide-range of operating temperature from -40°C to +125 °C. High-efficiency switching and regulation of current is possible with the NVMFS5C468NLWFAFT3G, making it useful for load-switching applications. As it has a very low RDS(on) value, it is also suitable for use in power management applications.

The NVMFS5C468NLWFAFT3G is also useful for RF operations, as its low gate-charge makes the transistor suitable for switching high frequencies. It is popular in mobile device applications due to its low power consumption and efficiency in current regulation. It is also often used in low-voltage, low-current applications due to its high input impedance.

In conclusion, the NVMFS5C468NLWFAFT3G is a single gate MOSFET transistor, well suited for a variety of applications, including load-switching, power management, RF operations and low-voltage, low-current applications due to its low RDS (on) and wide-range of operating temperature.  The NVMFS5C468NLWFAFT3G can be a great choice for users looking to control current and power their electronic devices with high efficiency.

The specific data is subject to PDF, and the above content is for reference

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