NVMFS5C682NLWFAFT1G

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The NVMFS5C682NLWFAFT1G is a surface mount enhancement mode type N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) from ON Semiconductor. It is ideal for battery and solar powered applications, offering low on-state resistance, extremely low gate threshold voltage, and excellent thermal performance. This device can be used in high-precision switched-mode power supplies and as a power switch in high frequency applications.

The NVMFS5C682NLWFAFT1G is a single MOSFET device, meaning it can act as a switch that is controlled by a single gate signal. It binds together two discrete conductivity types (N-type and P-type) to form a channel of low resistance. This device has an N-channel architecture with a trench design to protect the circuit and add robustness. It also has an NXP Advanced Lateral MOSFET (ALMOS) technology, which provides lower power consumption, higher switching speed, and a stabilized functioning.

To ensure maximum control and reduce the current consumption, the NVMFS5C682NLWFAFT1G has a gate threshold voltage as low as 0.8V, and a drain-source breakdown voltage of 40V. The maximum drain current is rated at 2A, and the maximum drain-source on-state resistance is 0.02Ω. Such low values translate into lower power loss and improved thermal efficiency. This device can also handle very high switching speeds; it has a minimum turn-on switching time of 1.1ns and a maximum turn-off switching time of 0.55ns.

The NVMFS5C682NLWFAFT1G is suitable in a large range of applications, such as low-voltage small and medium power converters, battery management, automotive power management, lighting, and high frequency power switches. It can be operated between a junction temperature range of –55°C to 175°C, while its package allows it to be surface-mounted with ease. This MOSFET is a small, cost-effective solution for small and medium switching power supply applications.

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