Allicdata Part #: | PSMN003-30P,127-ND |
Manufacturer Part#: |
PSMN003-30P,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 75A TO220AB |
More Detail: | N-Channel 30V 75A (Tc) 230W (Tc) Through Hole TO-2... |
DataSheet: | PSMN003-30P,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The PSMN003-30P is a single junction MOSFET transistor with a 30P package. This type of transistor is ideal for a wide range of applications where low noise, high voltage power, insulation, and electrolytic properties need to be maintained. This type of device has a very low threshold voltage, making them more suitable for low current applications, such as in high power radio transmitters, computer motherboards, and applications that require high switching speeds.
The PSMN003-30P transmits electromagnetic energy derived from electricity through a gate. It is composed of a semiconductor material that acts as an insulator between current-carrying sources and the gate. The most common materials used are silicon and germanium. As a gate voltage increases, the source-to-drain current is increased. Therefore, the PSMN003-30P is used to switch the current-carrying source on and off.
The PSMN003-30P has a wide range of application fields. It is suitable for low noise, high voltage power supply applications, power amplifiers, gate drivers, base drivers, and switching applications. In addition, it can be used as a voltage level-shifter, enabling a logic signal to be interfaced with other voltage levels. It can also be used for signal processing applications, such as signal switching and detection, noise cancellation, and filtering.
The working principle of the PSMN003-30P is fairly simple. When the gate voltage is at or slightly above the threshold voltage, the current from the drain to the source is switched on. When it is below the threshold voltage, the current from the drain to the source is switched off. This type of transistor has a low output resistance, meaning that a small current change in the gate can cause a large change in source-to-drain current.
In addition, the PSMN003-30P has a low capacitance. When the capacitance is lowered, the switching frequency of the transistor increases. This improves signal processing speed, particularly in high-frequency applications. Furthermore, the low capacitance of the PSMN003-30P allows it to be used in heavy load applications without causing any damage.
The PSMN003-30P is an excellent choice for a wide range of applications requiring high voltage power, insulation, and electrolytic properties. It has a low threshold voltage, high switching speeds, and a low capacitance, making it particularly suitable for signal processing applications. Furthermore, its wide range of application fields makes it a versatile and cost-effective solution for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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