Vgs(th) (Max) @ Id:	1.95V @ 1mA
Package / Case:	SC-100, SOT-669, 4-LFPAK
Supplier Device Package:	LFPAK56, Power-SO8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	141W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3504pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	57nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	2.05 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to PSMN1R9-25YLC,115

The PSMN1R9-25YLC,115 is a N-channel logic level field-effect transistor (FET). This type of FET was developed to function as a switch allowing current to flow from source to drain in order to provide switching capabilities for digital logic circuits. In this article, we will explore the features, application field, and working principle of the PSMN1R9-25YLC,115.

Features of the PSMN1R9-25YLC,115

The PSMN1R9-25YLC,115 has a maximum drain-source voltage of 25V and a maximum drain current of 35A. It is also rated for a maximum power dissipation of 80W. This FET is RoHS compliant and can operate at junction temperatures up to 150°C. The maximum on-resistance at VGS=10V is 250mΩ. This FET is designed to minimize gate charge and come in a TO-252 leaded package.

Application Fields

The PSMN1R9-25YLC,115 is suitable for a variety of applications, including desktop and notebook computers, LCD and plasma display controllers, DC-DC converters, power supplies, and motor drivers. It is also a suitable choice for high efficiency power switching applications.

Working Principle

The working principle of the PSMN1R9-25YLC,115 is based on the transistor effect. A voltage is applied to the gate of the FET and controls the current flow from the source to the drain. When a positive voltage is applied to the gate, the current flow from the source to the drain increases as the voltage increases. The drain current is regulated by the voltage applied to the gate, thus controlling the current flow.

Conclusion

In conclusion, the PSMN1R9-25YLC,115 is a N-channel logic level FET suitable for a variety of applications. It has a maximum drain-source voltage of 25V, a maximum drain current of 35A, and a maximum power dissipation of 80W. The maximum on-resistance at VGS=10V is 250mΩ. Its working principle is based on the transistor effect, whereby a voltage applied to the gate controls the current flow from the source to the drain.

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