PSMN5R9-30YL,115 Allicdata Electronics
Allicdata Part #:

568-6903-2-ND

Manufacturer Part#:

PSMN5R9-30YL,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH 30V 78A LFPAK
More Detail: N-Channel 30V 78A (Tc) 63W (Tc) Surface Mount LFPA...
DataSheet: PSMN5R9-30YL,115 datasheetPSMN5R9-30YL,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 63W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1226pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21.3nC @ 10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The PSMN5R9-30YL,115 is a single, packaged N-channel field effect transistors (FETs). This MOSFETs, or metal oxide semiconductor field effect transistors, are relatively new developments in the field of transistors, and are becoming more and more popular as the advantages they provide become more widely known.

MOSFETs are one type of FETs, which works by using an electrical field to control the flow of current. FETs have three terminals, the source, gate and drain. This three-terminal device has several distinguishing features compared to a regular bipolar junction transistor (BJT), as it does not require any current to control its operations – this is why it’s also called a “voltage controlled current” device. This makes it an ideal choice for high power applications. The PSMN5R9-30YL,115 is no exception, and it has recently been used in a variety of applications, from power controllers to motor control.

The source terminal is connected to the ground, while the gate supplies the voltage needed to turn the transistor on or off. The drain terminal is where current is drawn from when the transistor is in its ‘on’ mode. By applying a voltage to the gate, the drain can be controlled to either a high or low voltage, depending on the applied voltage. By controlling the voltage with the gate, the same transistors can be used for both amplifying and switching applications.

One major advantage of MOSFETs such as the PSMN5R9-30YL,115 is their power rating. This particular transistor has a maximum operating temperature range of 105°C and a current handling capability of up to 30 A. This makes it suitable for applications such as motor control, power converters and switching circuits.

The PSMN5R9-30YL,115 also offers significant thermal performance, with low rise and fall times. This helps reduce power dissipation, making it ideal for use in high-frequency switching applications. Furthermore, the on-resistance of this transistor is much lower than that of a BJT, providing higher efficiency and lower power loss.

In terms of reliability, the PSMN5R9-30YL,115 is highly reliable, with a maximum operating lifetime of up to 5 million hours, when used in its specified temperature range. This makes the device suitable for both commercial and industrial applications, where reliability is a major factor.

In conclusion, the PSMN5R9-30YL,115 is a single, packaged N-channel field effect transistor (FET) with a current handling capability of up to 30 A. It has excellent thermal performance, with low rise and fall times, making it well suited for high-frequency switching applications. It also has a maximum operating temperature range of 105°C, and a maximum operating lifetime of 5 million hours. As such, it’s suitable for use in a wide range of commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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