PSMN3R7-25YLC,115

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The PSMN3R7-25YLC,115 is an N-channel Enhancement Mode Power MOSFET. It comes from the industry-leading product range of Fairchild Semiconductor, world leader in power solutions. The PSMN3R7-25YLC,115 offers a single MOSFETs solution for the user. It combines low on-state resistance with fast switching capabilities and cost effectiveness. This device is ideal for high efficiency, low power applications, such as DC-DC converters, battery protection circuits and DC motor control.

The PSMN3R7-25YLC,115 has several advantages over other MOSFET solutions. The RDS(on) is lower than other solutions, making it a better choice for high power applications. The gate charge is also lower, offering improved switch-time performance. The PSMN3R7-25YLC,115 also comes in an industry-standard TO-220 and TO-247 packages, allowing it to be used in different environments.

The PSMN3R7-25YLC,115 is suitable for applications such as DC motor control, PWM controllers, LED drivers and power management units. It is also ideal for switching applications as it offers low on-state resistance and fast switching characteristics. Additionally, the PSMN3R7-25YLC,115 is commonly used in power supply applications due to its efficiency, low voltage drop and low noise output.

The PSMN3R7-25YLC,115 is an N-channel Enhancement Mode Power MOSFET with a maximum drain to source voltage of 25 V. Its maximum drain current is 11 A and the maximum drain current (continuous) is 8.8 A. The maximum power dissipation of the device is 107 W. The PSMN3R7-25YLC,115 has a threshold voltage of 4 V and a reverse transfer capacitance of 7.3 pF. It has a gate oxide thickness of 1200 Å.

The normalized on-state resistance of the device is 1.15 Ω and the normalized on-state resistance is 0.95 Ω. The turn-on delay time of the device is 28 ns and its reverse recovery time is 16 ns. The maximum junction temperature of the PSMN3R7-25YLC,115 is 175⁰C and the avalanche energy is 11 mJ. The device has a low gate charge of 30 nC and the total gate charge is 40 nC.

The working principle of the PSMN3R7-25YLC,115 is based on the theory of metal-oxide-semiconductor transistors. The transistor consists of a gate, a source, and a drain. By applying a voltage to the gate, a controlled electric field is created that changes the flow of electrons between the source and the drain, thus controlling the current flow. This flow is known as a channel and can be modulated by changing the voltage on the gate. This modulation of current allows the device to amplify signals and be used in a variety of applications.

In conclusion, the PSMN3R7-25YLC,115 is a single MOSFETs device from Fairchild Semiconductor. It features low on-state resistance, fast switching characteristics, and industry-standard package options. It is used for high efficiency and low power applications such as DC-DC converters, battery protection circuits, DC motor control and power management units. The PSMN3R7-25YLC,115 is an N-channel Enhancement Mode Power MOSFET and its working principle is based on the theory of metal-oxide-semiconductor transistors.

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