Allicdata Part #: | PSMN005-30K,518-ND |
Manufacturer Part#: |
PSMN005-30K,518 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 20A SOT96-1 |
More Detail: | N-Channel 30V 20A (Tc) 3.5W (Tc) Surface Mount 8-S... |
DataSheet: | PSMN005-30K,518 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 4.5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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PSMN005-30K, 518 is an advanced MOSFET design that takes advantage of the unique electrical characteristics of its construction to offer superior performance and reliability. It is ideal for use in various applications, such as in high-power switches and amplifiers, in power supplies and motor drive circuits, and in automotive control systems.
Construction of the PSMN005-30K, 518
The PSMN005-30K, 518 is a N-channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). It has two source terminals – an upper and a lower – in the upper and lower parts of the device, as well as a single drain terminal and a gate terminal. The device also contains a drain-source breakdown voltage of 30 Volts and a drain current rating of 518 amperes.
PSMN005-30K, 518 Applications
The PSMN005-30K, 518 is designed for use in a variety of high-powered applications. Its drain current rating of 518 A makes it ideal for use in high-power switches and amplifiers, in power supplies and motor drive circuits, and in automotive control systems. It also has high-power-handling capability and superior reliability, as well as a wide and rugged range of operating temperature.
Because of its capabilities, the PSMN005-30K, 518 is suitable for use in a variety of applications, including power factor correction, switching frequencies above 600 Hz, load-sensing in motor drives, and power supplies in automotive systems.
PSMN005-30K, 518 Working Principle
The PSMN005-30K, 518 works by using the depletion-mode, temperature independent operation of a depletion-mode MOSFET. This is achieved by making either or both the source and drain terminals stronger than the gate terminal, creating a depletion zone around the transistor. When an electrical signal, in the form of a positive or negative voltage, is applied to the gate terminal, the depletion zone increases or decreases, thereby controlling the current that can flow through the device.
The PSMN005-30K, 518 can also be configured for either an inverting or non-inverting operation. In an inverting operation, the input signal is inverted, while in a non-inverting operation, the output is unaffected by the polarity of the input signal. This makes the PSMN005-30K, 518 a versatile device, as it can be used for a variety of operational needs.
Conclusion
The PSMN005-30K, 518 is a versatile MOSFET design that offers superior performance and reliability. Its low drain-source breakdown voltage and high drain current rating make it ideal for use in a variety of high-power applications, such as in power supplies and motor drive circuits, in automotive control systems, and in high-power switches and amplifiers. The device also offers temperature dependent operation and non-inverting and inverting configurations, making it a great choice for a variety of operational needs.
The specific data is subject to PDF, and the above content is for reference
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