PSMN035-100LS,115

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	8-VDFN Exposed Pad
Supplier Device Package:	8-DFN3333 (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	65W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1350pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	32 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	27A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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PSMN035-100LS,115 is an N-channel enhancement mode field-effect transistor (FET) which means a type of transistor that utilize electric field to control the conductivity of the material is made by NXP Semiconductors. This transistor is characterized by fast switching speed, low gate-source capacitance and small gate-source threshold voltage. The size of PSMN035-100LS,115 is 3.3 mm x 2.8 mm, ideal for space-constrained applications, and made with a 1.6 watt on-resistance with a 40V drain-source voltage.
This transistor is usually used for motion control and power conversion application, such as motor drives, industrial inverters, smart LED lighting and LED driver applications, Robotics, etc. It is suitable for building brushless DC motor drives, microwave ovens and HID/LED lighting applications etc, as well as power supplies, audio amplifiers, battery chargers and thermal management.
The working principle of PSMN035-100LS,115 is quite simple yet efficient. It works by the application of electric field to control the flow of current in a material (in this case, silicon). When a gate voltage is applied to the transistor\'s gate, it induces a charge in the gate due to electrostatic attraction. This gate voltage then effectively creates a voltage barrier between the source and the drain, which allows or restricts current flow depending on the voltage applied.
When the voltage is positive and greater than the threshold voltage, the transistor is said to be “on”, and current is allowed to pass through. When the voltage is negative or smaller than the threshold voltage, the transistor is “off” and no current can pass. The amount of current that can pass through the transistor depends on the size of the gate voltage, with larger gate voltages allowing more current through.
This transistor is typically used in motor control where the applied gate voltage can be used to rapidly control the speed of the motor. In power conversion applications, the gate voltage can be used to control the current-carrying capacity of the transistor which allows for efficient power regulation. In LED lighting applications, the transistor can be used as a switch that rapidly turns on and off, allowing for smooth and consistent current flow to the LED.
The 2.8mm x 3.3mm dimensions of the transistor make it ideal for space-constrained applications. It is able to deliver robust, high efficiency performance in applications ranging from LED lighting to motor control and power conversion. The transistor is also designed with ESD protection features, making it particularly suitable for smart LED lighting and LED driver applications.
In summary, the PSMN035-100LS,115 is an N-channel enhancement mode FET that is used in a wide range of applications such as motion control, power conversion, and LED lighting. It works by applying electric field to control the flow of current in a material, allowing for quick and efficient power regulation. This transistor is ideal for space-constrained applications, and designed with robust ESD protection features.

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